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BTA208X-1000C
3Q Hi-Com Triac
Product profile1.1 General descriptionPlanar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package. This triac is intended for use in motor control circuits where very high blocking
voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This "series C"
triac will commutate the full rated RMS current at the maximum rated junction temperature
without the aid of a snubber.
1.2 Features and benefits 3Q technology for improved noise
immunity High commutation capability with
maximum false trigger immunity High immunity to false turn-on by dV/dt Isolated mounting base package Planar passivated for voltage
ruggedness and reliability Triggering in three quadrants only Very high voltage capability
1.3 Applications Compressor starting controls General purpose motor controls Reversing induction motor control
circuits e.g. vertical axis washing
machines
1.4 Quick reference data A208X-1000C
3Q Hi-Com Triac
Rev. 4 — 24 January 2011 Product data sheet
Table 1. Quick reference dataVDRM repetitive peak
off-state voltage
--1000V
ITSM non-repetitive
peak on-state
current
full sine wave; Tj(init) =25°C; =20 ms; see Figure 4;see Figure 5
--65 A
IT(RMS) RMS on-state
current
full sine wave; Th≤73 °C;
see Figure 3; see Figure 1;
see Figure 2
--8 A
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac Pinning information Ordering information
Static characteristicsIGT gate trigger
current =12 V; IT= 0.1 A; T2+ G+; =25°C; see Figure 7
2635 mA =12 V; IT= 0.1 A; T2+ G-; =25°C; see Figure 7 1335mA =12 V; IT= 0.1 A; T2- G-; =25°C; see Figure 7 2335mA
Table 1. Quick reference data …continued
Table 2. Pinning information T1 main terminal 1
SOT186A (TO-220F) T2 main terminal 2 G gate n.c. mounting base; isolated
Table 3. Ordering informationBTA208X-1000C TO-220F plastic single-ended package; isolated heatsink mounted; mounting hole; 3-lead TO-220 "full pack"
SOT186A
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage - 1000 V
IT(RMS) RMS on-state current full sine wave; Th≤73 °C; see Figure 3;
see Figure 1; see Figure 2 A
ITSM non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; =20 ms; see Figure 4; see Figure 5
-65 A
full sine wave; Tj(init) =25°C; =16.7ms
-71 A2 tI2 t for fusing tp=10 ms; sine-wave pulse - 21 A2s
dIT/dt rate of rise of on-state current IT =12A; IG= 0.2 A; dIG/dt= 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac Thermal characteristics
Table 5. Thermal characteristicsRth(j-h) thermal resistance from junction to
heatsink
full cycle or half cycle; with heatsink compound; see Figure 6 --4.5 K/W
full cycle or half cycle; without heatsink
compound; see Figure 6
--6.5 K/W
Rth(j-a) thermal resistance
from junction to ambient
in free air - 55 - K/W
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac Isolation characteristics
Table 6. Isolation characteristicsVisol(RMS) RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free ; 50Hz≤f≤60 Hz; RH≤65 %; =25°C - 2500 V
Cisol isolation capacitance from main terminal 2 to external
heatsink; f=1 MHz; Th =25°C
-10 - pF
NXP Semiconductors BTA208X-1000C
3Q Hi-Com Triac Characteristics
Table 7. Characteristics
Static characteristicsIGT gate trigger current VD =12V; IT= 0.1 A; T2+ G+; =25°C; see Figure 7
2635 mA =12V; IT= 0.1 A; T2+ G-; =25°C; see Figure 7 1335mA =12V; IT= 0.1 A; T2- G-; =25°C; see Figure 7 2335mA latching current VD =12V; IG= 0.1 A; T2+ G+; =25°C; see Figure 8 2550mA =12V; IG= 0.1 A; T2+ G-; =25°C; see Figure 8 4875mA =12V; IG= 0.1 A; T2- G-; =25°C; see Figure 8 3050mA holding current VD =12V; Tj =25 °C; see Figure 9 - 2050mA on-state voltage IT =10A; Tj=25 °C; see Figure 10 - 1.3 1.65 V
VGT gate trigger voltage VD =12V; IT= 0.1 A; Tj =25°C;
see Figure 11
-0.7 1.5 V =400 V; IT= 0.1 A; Tj= 125°C 0.25 0.4 - V off-state current VD= 1000 V; Tj =125°C - 0.1 0.5 mA
Dynamic characteristicsdVD/dt rate of rise of off-state
voltage
VDM =670 V; Tj= 125 °C; exponential
waveform; gate open circuit
1000 4000 - V/µs
dIcom/dt rate of change of
commutating current =400 V; Tj= 125 °C; IT(RMS) =8A;
dVcom/dt=20 V/µs; gate open circuit;
snubberless condition; see Figure 12 32 - A/ms
