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BTA208S-600E |BTA208S600EPHILIPSN/a2376avai3Q Hi-Com Triac
BTA208S-600F |BTA208S600FPHILIPSN/a4500avaiThree quadrant triacs guaranteed commutation


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BTA208S-600E-BTA208S-600F
Three quadrant triacs guaranteed commutation
Philips Semiconductors Product specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacsina plastic envelope suitable forsurface mounting, intended for usein BTA208S- 600D -
motor control circuitsor with other highly BTA208S- 600E 800E
inductive loads. These devices balance BTA208S- 600F 800Fthe requirements of commutation VDRM Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitive gate"E series and "logic level" IT(RMS) RMS on-state current 8 8 AD series are intendedfor interfacing with ITSM Non-repetitive peak on-state 65 65 A
low power drivers, including micro current
controllers.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
MT1 MT2 gate
tab MT2
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800

VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 72 A2 tI2 t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2
Philips Semiconductors Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA208S- ...D ...E ...F

IGT Gate trigger current2 VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA On-state voltage IT = 10 A - 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.5 mA
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA208S- ...D ...E ...F

dVD/dt Critical rate of rise of VDM = 67% VDRM(max);20 60 70 - V/μs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 2 5 14 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 10V/μs; gate
open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 6 10 20 - A/ms
commutating current IT(RMS) = 8 A;
dVcom/dt = 0.1V/μs; gate
open circuit
Philips Semiconductors Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 102˚C.
Fig.6. Normalised gate trigger voltage 468 100
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of half cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Minimum, critical rate of change of
commutating current, dIcom/dt versus junction
-50 0 50 100 150
Tj/°CIGT(25°C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01
tp / s
Zth j-mb (K/W)
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
100 40 60 80 100 120 140
Tj/˚C
dIcom/dt (A/ms)

-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
Philips Semiconductors Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
MECHANICAL DATA

Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS

Dimensions in mm
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes

1. Plastic meets UL94 V0 at 1/8".
2.5
Philips Semiconductors Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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