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BTA16-400B |BTA16400BSTN/a10avaiSTANDARD TRIACS


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BTA16-400B
STANDARD TRIACS
BTA16 B
BTB16 B

STANDARD TRIACS
Symbol Parameter Value Unit

IT(RMS) RMS on-state current
(360° conduction angle)
BTA Tc=80 °C16 A
BTB Tc=90°C
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)= 8.3ms 170 A=10 ms 160
I2tI2t value tp=10 ms 128 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 500mA diG/dt= 1A/μs
Repetitive=50Hz A/μs
Non
Repetitive
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 125 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
260 °C
TO220AB

(Plastic)G HIGH SURGE CURRENT CAPABILITY. COMMUTATION: (dV/dt)c> 10V/μs. BTA Family:
INSULATING VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA/ BTB16-...B Unit
400 600 700 800

VDRM
VRRM
Repetitive peak off-state voltage= 125°C
400 600 700 800 V
ABSOLUTE RATINGS
(limiting values)
FEATURES

The BTA/BTB16B triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capabilityis re-
quired. Application such as phase control and
static switching on inductiveor resistive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit

Rth (j-a) Junctionto ambient 60 °C/W
Rth (j-c) DC Junctionto casefor DC BTA 2.9 °C/W
BTB 2.3
Rth (j-c) AC Junctionto casefor 360° conduction angleF=50 Hz)
BTA 2.2 °C/W
BTB 1.75
Symbol Test Conditions Quadrant Suffix Unit

IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 mA MAX 100
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG= 500mA
dIG/dt= 3A/μs
Tj=25°C I-II-III-IV TYP 2 μs IG=1.2 IGT Tj=25°C I-III-IV TYP 40 mA 70 *IT= 500mA gate open Tj=25°C MAX 50 mATM *ITM= 22.5A tp= 380μs Tj=25°C MAX 1.6 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 2
dV/dt* Linear slopeupto VD=67%VDRM
gate open
Tj=125°C MIN 250 V/μs
(dV/dt)c* (dI/dt)c= 7A/ms Tj=125°C MIN 10 V/μsFor either polarityof electrodeA2 voltage with referenceto electrodeA1. (AV) =1W PGM= 10W(tp=20 μs) IGM =4A(tp =20 μs) VGM= 16V(tp=20 μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA16B/ BTB16B
Fig.1: Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves arecutoffby (dI/dt)c limitation)
Fig.3:
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTB).
Fig.4:
RMS on-state current versus case temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.5:
Relative variationof thermal impedance versus
pulse duration.
Fig.6:
Relative variationof gate trigger current and
holding current versus junction temperature.
Fig.2:
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTA).
BTA16B/ BTB16B
Fig.8: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t ≤ 10ms, and
corresponding valueofI2t.
Fig.9:
On-state characteristics (maximum values).
Fig.7:
Non Repetitive surge peak on-state current
versus numberof cycles.
BTA16B/ BTB16B
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method:C
Marking: type number
Weight:2.3g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N.
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038
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forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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BTA16B/ BTB16B
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