BT258S-800R Fast Delivery |IC PHOENIX CO.,LIMITED

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BT258S-800R
Thyristors logic level
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated,sensitive gate thyristorin SYMBOL PARAMETER MAX. UNIT plastic envelope, suitable forsurface mounting, intendedfor usein
general purpose switching and VDRM, VRRM Repetitive peak off-state voltages 800 V
phase control applications. These IT(AV)devices areintendedtobe interfaced I T(RMS) Average on-state current 5 A
directly to microcontrollers, logic ITSM RMS on-state current 8 A
integrated circuits and other low Non-repetitive peak on-state current 75 Apower gate trigger circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN
NUMBER cathode anode gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state - 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
IT(RMS) RMS on-state current all conduction angles - 8 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A2 tI2 t for fusing t = 10 ms - 28 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 1251 ˚C
temperature
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 2.0 K/W
junction to mounting base
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 μA Latching current VD = 12 V; IGT = 0.1 A - 0.4 10 mA Holding current VD = 12 V; IGT = 0.1 A - 0.3 6 mA On-state voltage IT = 16 A - 1.3 1.6 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITD/dt Critical rate of rise of VDM = 67% V DRM(max); Tj = 125 ˚C; 50 100 - V/μs
off-state voltage exponential waveform; RGK = 100 Ω
tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - μstime dIG /dt = 0.2 A/μs Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - μs
turn-off time ITM = 12 A; VR = 24 V; dITM/dt = 10 A/μs;dVD /dt = 2 V/μs; RGK = 1 kΩ
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C. 2 4 6
IT(AV) (A)
Ptot (W) Tmb(max) (˚C)
109 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01
tp / s
Zth j-mb (K/W)
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 1501
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
MECHANICAL DATA
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
2.5
Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.

Partno	Mfg	Dc	Qty	Available	Descript
BT258S-800R \|BT258S800R	PHI/PBF	N/a	547	avai	Thyristors logic level
BT258S-800R \|BT258S800R	NXP	N/a	2477	avai	Thyristors logic level