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BT169G
SCR
-92 BT169G
SCR 20 March 2014 Product data sheet General descriptionPlanar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plasticpackage.
Features and benefits High voltage capability• Planar passivated for voltage ruggedness and reliability• Sensitive gate
Applications Ignition circuits• Lighting ballasts• Protection circuits• Switched Mode Power Supplies
Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max UnitVDRM repetitive peak off-state voltage - - 600 V
VRRM repetitive peak reversevoltage - - 600 V
ITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 8 A
IT(AV) average on-state
current
half sine wave; Tlead ≤ 83 °C; Fig. 1 - - 0.5 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3 - 0.8 A
Static characteristicsIGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7 50 200 mA
NXP Semiconductors BT169G
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol A anode G gate K cathode23
TO-92 (SOT54)sym037 K
Ordering information
Table 3. Ordering information
PackageType number
Name Description VersionBT169G TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
BT169G/DG TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
NXP Semiconductors BT169G
SCR Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVDRM repetitive peak off-state voltage - 600 V
VRRM repetitive peak reverse voltage - 600 V
IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 - 0.5 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3 0.8 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 8 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 9 A2t I2 t for fusing tp = 10 ms; SIN - 0.32 A2s
dIT/dt rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/ 50 A/µs
IGM peak gate current - 1 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
001aab446
Ptot(W)
125 0.6
Tlead(max)(°C)
a = 1.57
NXP Semiconductors BT169G
SCR001aab449
IT(RMS)(A)
surge duration (s)10-2 10-1 101
f = 50 Hz; Tlead = 83 °C
Fig. 2. RMS on-state current as a function of surgeduration for sinusoidal currentsTlead (°C)-50 1501000 50
001aab450
IT(RMS)(A)
83 °C
Fig. 3. RMS on-state current as a function of lead
temperature; maximum values001aab499
ITSM(A)
number of cycles1 10310210
Tj(init) = 25 °C max ITSM
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
NXP Semiconductors BT169G
SCR001aab497
tp (s)10-5 10-210-310-4
ITSM(A)
Tj(init) = 25 °C max ITSM
tp ≤ 10 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
NXP Semiconductors BT169G
SCR Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max UnitRth(j-lead) thermal resistance
from junction to lead
Fig. 6 - - 60 K/W
Rth(j-a) thermal resistance
from junction toambient
printed circuit board mounted: lead
length = 4 mm 150 - K/W
001aab451
Zth(j-lead)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
NXP Semiconductors BT169G
SCR Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristicsIGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7 50 200 mA latching current VD = 12 V; IG = 0.5 mA; Tj = 25 °C;
Fig. 8 2 6 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2 5 mA on-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 10 - 1.25 1.7 V
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 11 0.5 0.8 VVGT gate trigger voltage
VD = 600 V; IT = 10 mA; Tj = 125 °C;
Fig. 11
0.2 0.3 - V off-state current VD = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA reverse current VR = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA
Dynamic characteristicsVDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12
500 800 - V/µsdVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12 25 - V/µs
tgt gate-controlled turn-on
time
ITM = 2 A; VD = 600 V; IG = 10 mA; dIG/
dt = 0.1 A/µs; Tj = 25 °C 2 - µs commutated turn-off
time
VDM = 402 V; Tj = 125 °C; ITM = 1.6 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM) 100 - µs
