BT169B-BT169D-BT169D. Fast Delivery |IC PHOENIX CO.,LIMITED

BT169D ,Thyristor SCR 400V 9A 3-Pin SPTPIN CONFIGURATION SYMBOLPIN DESCRIPTION1 anodeak2 gate3 cathodeg32 1
BT169D. ,Thyristor SCR 400V 9A 3-Pin SPTGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated, sensitive gate thyristors SYMBOL PARAM ..
BT169G ,SCRApplicationsIgnition circuits•• Lighting ballastsProtection circuits•• Switched Mode Power Supplies ..
BT169G ,SCRFeatures and benefits• High voltage capabilityPlanar passivated for voltage ruggedness and reliabil ..
BT236X-600 ,4Q TriacApplicationsGeneral purpose motor control•• General purpose switching4. Quick reference dataTable 1 ..
BT258-500R ,Logic level thyristor
BZW04P28B , GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 400 Watts Peak 1.0 Watt Steady Stae
BZW04P-28B , GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 400 Watts Peak 1.0 Watt Steady Stae
BZW04P-299B , GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 400 Watts Peak 1.0 Watt Steady Stae
BZW04P5V8 ,Conductor Holdings Limited - TRANSIENT VOLTAGE SUPPRESSOR
BZW04P-5V8 ,Conductor Holdings Limited - TRANSIENT VOLTAGE SUPPRESSOR
BZW06-10B ,Diode TVS Single Bi-Dir 10.2V 600W 2-Pin DO-15BZW06-5V8/376®BZW06-5V8B/376BTMTRANSIL

BT169B-BT169D-BT169D.
Thyristors logic level
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX MAX MAX MAX UNIT
inaplasticenvelope,intendedfor use ....in general purpose switching and BT169
phase control applications. These VDRM, Repetitive peak BD E G V
devices areintendedtobe interfaced VRRM off-state voltages 200 400 500 600directly to microcontrollers, logic I T(AV) Average on-state A
integrated circuits and other low current 0.5 0.5 0.5 0.5
power gate trigger circuits. IT(RMS) RMS on-state current AITSM Non-repetitive peak 0.8 0.8 0.8 0.8 A
on-state current 8888
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION anode gate cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDE G
VDRM, VRRM Repetitive peak off-state - 2001 4001 5001 6001 V
voltages
IT(AV) Average on-state current half sine wave; - 0.5 A
Tlead ≤ 83 ˚C
IT(RMS) RMS on-state current all conduction angles - 0.8 A
ITSM Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
Tj = 25 ˚C prior to surge2 tI2 t for fusing t = 10 ms - 0.32 A2s
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/μs
on-state current after dIG/dt = 100 mA/μs
triggering
IGM Peak gate current - 1 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 2 W
PG(AV) Average gate power over any 20 ms period - 0.1 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperature321
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-lead Thermal resistance - - 60 K/W
junction to lead
Rth j-a Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 μA Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -2 6 mA Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -2 5 mA On-state voltage IT = 1 A - 1.2 1.35 V
VGT Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
gate open circuit
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; - 0.05 0.1 mA
RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 500 800 - V/μs
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - μs
time dIG/dt = 0.1 A/μs Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - μs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/μs;
dVD/dt = 2 V/μs; RGK = 1 kΩ
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 83˚C. 0.1 0.2 0.3 0.4 0.5 0.6 0.70
IF(AV) / A
Ptot / W Tc(max) / C
125 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 1500
Tlead / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.50
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Zth j-lead (K/W)100
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C)
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
MECHANICAL DATA
Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes
1. Epoxy meets UL94 V0 at 1/8".
Plastic single-ended leaded (through hole) package; 3 leads SOT54
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.

Partno	Mfg	Dc	Qty	Available	Descript
BT169B	PH	N/a	450	avai	Thyristors logic level
BT169D	PHILIP.	N/a	568	avai	Thyristor SCR 400V 9A 3-Pin SPT
BT169D. \|BT169D	PHILIPS	N/a	42	avai	Thyristor SCR 400V 9A 3-Pin SPT