BT168GW Fast Delivery |IC PHOENIX CO.,LIMITED

BT168GW ,SCRapplications4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ ..
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BT168GW
SCR
BT168GWSCR 17 March 2014 Product data sheet General description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plasticpackage. This SCR is designed to be interfaced directly to microcontrollers, logicintegrated circuits and other low power gate trigger circuits. Features and benefits Sensitive gate• Planar passivated for voltage ruggedness and reliability• Direct triggering from low power drivers and logic ICs• Surface mountable package Applications Circuit breakers• RCD/GFI/LCCB applications Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage
[1] - - 600 V
VRRM repetitive peak reversevoltage - - 600 V
ITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 8 A
IT(AV) average on-state
current
half sine wave; Tsp ≤ 112 °C; Fig. 1 - - 0.63 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3 - 1 A
Static characteristics
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 9 50 200 µA
NXP Semiconductors BT168GW
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode G gate mb mb; connected to anode 1 32
SC-73 (SOT223)
sym037 K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT168GW SC-73 plastic surface-mounted package with increased heatsink; 4leads SOT223
NXP Semiconductors BT168GW
SCR Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage [1] - 600 V
VRRM repetitive peak reverse voltage - 600 V
IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; Fig. 1 - 0.63 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3 1 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 8 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 9 A2t I2 t for fusing tp = 10 ms; SIN - 0.32 A2s
dIT/dt rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/ 50 A/µs
IGM peak gate current - 1 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but thethyristor may switch to the on-state.
NXP Semiconductors BT168GW
SCR
IT(AV) (A)0 0.80.60.40.2
001aab496
0.6Ptot(W)
Tsp(max)(°C)
a = 1.57
conductionangle(degrees)
formfactora60901201802.82.21.91.57
α = conduction angle; a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
001aab498
IT(RMS)(A)
112°C
Tsp (°C)-50 1501000 50
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
001aab500
IT(RMS)(A)
surge duration (s)10-2 10-1 101
f = 50 Hz; Tsp = 112 °C
Fig. 3. RMS on-state current as a function of surgeduration; maximum values
NXP Semiconductors BT168GW
SCR
001aab497
tp (s)10-5 10-210-310-4
ITSM(A)
Tj(init) = 25 °C max ITSM
tp ≤ 10 ms
Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aab499
ITSM(A)
number of cycles1 10310210 Tj(init) = 25 °C max ITSM
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
NXP Semiconductors BT168GW
SCR Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance
from junction to solderpoint
Fig. 6 - - 15 K/W
printed circuit board mounted; minimumfootprint; Fig. 7 - 156 - K/WRth(j-a) thermal resistancefrom junction to
ambient printed circuit board mounted; pad
area; Fig. 8 70 - K/W
003aae245-2
10-5 10-4 10-3 10-2 1 10tp(s)
Zth(j-sp)(K/W)
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
NXP Semiconductors BT168GW
SCR
001aab508
3.8min
1.5min
1.5min(3×)
1.5min
All dimensions are in mm
Fig. 7. Minimum footprint SOT223 001aab509
All dimensions are in mm
Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 8. Printed circuit board pad area: SOT223
NXP Semiconductors BT168GW
SCR Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 9 50 200 µA latching current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ;
Tj = 25 °C; Fig. 10 2 6 mA holding current VD = 12 V; RGK = 1 kΩ; Tj = 25 °C;
Fig. 11 2 5 mA on-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 12 - 1.25 1.7 V
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 13 0.5 0.8 VVGT gate trigger voltage
VD = 600 V; IT = 10 mA; Tj = 125 °C 0.2 0.3 - V off-state current VD = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA reverse current VR = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA
Dynamic characteristics
VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 14
500 800 - V/µsdVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 14 25 - V/µs
tgt gate-controlled turn-on
time
ITM = 2 A; VD = 600 V; IG = 10 mA; dIG/
dt = 0.1 A/µs; Tj = 25 °C 2 - µs commutated turn-off
time
VDM = 402 V; Tj = 125 °C; ITM = 1.6 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM) 100 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT168GW	NXP	N/a	3000	avai	SCR