BT151U-800C Fast Delivery |IC PHOENIX CO.,LIMITED

BT151U-800C ,Thyristorsapplications I Average on-state current 7.5 7.5 7.5 AT(AV)include motor control, industrial I RMS o ..
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BT151U-800C
BT151U series C; Thyristors
Philips Semiconductors Product specification
Thyristors BT151U series C
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated thyristorsina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use inapplications requiring high BT151U- 500C 650C 800C
bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling VRRM voltagesperformance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A
include motor control, industrial IT(RMS) RMS on-state current 12 12 12 A
and domestic lighting, heating and ITSM Non-repetitive peak 100 100 100 Astatic switching. on-state
current
PINNING - SOT533, (I-PAK) PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
NUMBER cathode anode gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500C -650C -800C
VDRM, VRRM Repetitive peak off-state - 5001 6501 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 104 ˚C - 7.5 A
IT(RMS) RMS on-state current all conduction angles - 12 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A2 tI2 t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Junction temperature - 125 ˚C
Top view MBK915
Philips Semiconductors Product specification
Thyristors BT151U series C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 1.3 K/W
junction to mounting base K/W
Rth j-a Thermal resistance in free air - 70 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA On-state voltage IT = 23 A - 1.44 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITD/dt Critical rate of rise of VDM = 67% V DRM(max); Tj = 125 ˚C;
off-state voltage exponential waveform
Gate open circuit 50 130 - V/μsRGK = 100 Ω 200 1000 - V/μs
tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μstq Circuit commutated VD = 67% V DRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
Philips Semiconductors Product specification
Thyristors BT151U series C
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 100 ˚C.
024 6 80
IT(AV) (A)
Ptot
(W) Tmb(max)
(°C)
105.5 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 150
Tmb (°C)
IT(RMS)(A)
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Thyristors BT151U series C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT (V)
(A)
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp (s)
Zth(j-mb)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
(K/W)
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 15010
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Thyristors BT151U series C
MECHANICAL DATA
Fig.13. SOT533, (I-PAK). Pin 2 connected to mounting base.
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533
Philips Semiconductors Product specification
Thyristors BT151U series C
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.

Partno	Mfg	Dc	Qty	Available	Descript
BT151U-800C \|BT151U800C	PH	N/a	2937	avai	Thyristors