BT151-500C Fast Delivery |IC PHOENIX CO.,LIMITED

BT151-500C ,SCRapplications I Average on-state current 7.5 7.5 7.5 AT(AV)include motor control, industrial I RMS o ..
BT151-500L ,SCRApplications Ignition circuits Protection Circuits Motor control Static switching1.4 Quick refe ..
BT151-650L ,SCRApplications Ignition circuits Protection Circuits Motor control Static switching1.4 Quick refe ..
BT151-650R ,SCRApplications Ignition circuits Protection Circuits Motor control Static switching1.4 Quick refe ..
BT151-800R ,SCRApplications Ignition circuits Protection Circuits Motor control Static switching1.4 Quick refe ..
BT151B-500R ,Thyristors
BZV90-C3V9 ,BZV90 series; Voltage regulator diodesAPPLICATIONS• General regulation functions.31DESCRIPTIONMedium-power voltage regulatordiodes in SOT ..
BZV90-C3V9 ,BZV90 series; Voltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZV90-C51 ,Voltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZV90-C62 ,BZV90 series; Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 1500 mW1 anode• Tolerance series: app ..
BZV90-C68 ,BZV90 series; Voltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZV90-C6V2 ,BZV90 series; Voltage regulator diodesFEATURES PINNING• Total power dissipation:PIN DESCRIPTIONmax. 1500 mW1 anode• Tolerance series: app ..

BT151-500C
SCR

�� Semiconductors Product specification
Thyristors BT151 series C
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated thyristorsina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT151- 500C 650C 800C
bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling VRRM voltages
performance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A
include motor control, industrial IT(RMS) RMS on-state current 12 12 12 A
and domestic lighting, heating and ITSM Non-repetitive peak on-state 100 100 100 A
static switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION cathode anode gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBO PARAMETER CONDITIONS MIN. MAX. UNIT
-500C -650C -800CDRM, Repetitive peak - 5001 6501 800 V
VRRM off-state voltages
IT(AV) Average on-state half sine wave; Tmb ≤ 109 ˚C - 7.5 A
current
IT(RMS) RMS on-state current all conduction angles - 12 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C
on-state current prior to surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A2 tI2 t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate - 5 V
voltage
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperature123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
�� Semiconductors �Product specification
Thyristors BT151 series C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT th j-mb Thermal resistance - - 1.3 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA On-state voltage IT = 23 A - 1.44 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C;
off-state voltage exponential waveform;
Gate open circuit 50 130 - V/μs
RGK = 100 Ω 200 1000 - V/μs
tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
�� Semiconductors ��Product specification
Thyristors BT151 series C
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 109˚C. 12 345 67 80
IT(AV) / A
Ptot / W Tmb(max) / C
125 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
�� Semiconductors �Product specification
Thyristors BT151 series C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH (25˚C),
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT (V)
(A)
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 15010
Tj / C
dVD/dt (V/us)
�� Semiconductors �Product specification
Thyristors BT151 series C
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,03,0 max
not tinned
1,3
max
(2x) 3
2,4
0,6
4,5
max
5,9min
15,8max
1,3
2,54 2,54
0,9 max (3x)
13,5
min

Partno	Mfg	Dc	Qty	Available	Descript
BT151-500C \|BT151500C	PH	N/a	340	avai	SCR