BT148W-600R Fast Delivery |IC PHOENIX CO.,LIMITED

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BT148W-600R
SCR
BT148W-600RSCR 13 March 2014 Product data sheet General description
Planar passivated SCR with sensitive gate in a SOT428 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers,logic integrated circuits and other low power gate trigger circuits. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Applications Adapters Battery powered applications Industrial automation Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage
[1] - - 600 V
VRRM repetitive peak reversevoltage - - 600 V
ITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 10 A
IT(AV) average on-state
current
half sine wave; Tsp ≤ 112 °C; Fig. 1 - - 0.6 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3 - 1 A
Static characteristics 50 200 µA
NXP Semiconductors BT148W-600R
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode G gate mb mb; connected to anode 1 32
SC-73 (SOT223)
sym037 K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT148W-600R SC-73 plastic surface-mounted package with increased heatsink; 4leads SOT223 Marking
Table 4. Marking codes
Type number Marking code
BT148W-600R BT148W 60
NXP Semiconductors BT148W-600R
SCR Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage [1] - 600 V
VRRM repetitive peak reverse voltage - 600 V
IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; Fig. 1 - 0.6 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3 1 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 10 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 11 A2t I2 t for fusing tp = 10 ms; SIN - 0.5 A2s
dIT/dt rate of rise of on-state current IT = 4 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 50 A/µs
IGM peak gate current - 1 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 1.2 W
PG(AV) average gate power over any 20 ms period - 0.12 W
Tstg storage temperature -40 150 °C junction temperature [2] - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but thethyristor may switch to the on-state.[2] Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
NXP Semiconductors BT148W-600R
SCR
IT(AV) (A)0 0.80.60.40.2
aaa-011921
Ptot(W)
Tsp(max)(°C)
a = 1.57
conductionangle(degrees)
formfactora60901201802.82.21.91.57
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
aaa-011922
IT(RMS)(A)
112°C
Tsp (°C)-50 1501000 50
Fig. 2. RMS on-state current as a function of solderpoint temperature; maximum values
aaa-011925
IT(RMS)(A)
surge duration (s)10-2 10-1 101
f = 50 Hz; Tsp = 112 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
NXP Semiconductors BT148W-600R
SCR
aaa-011923
tp (s)10-5 10-210-310-4
ITSM(A)
Tj(init) = 25 °C max ITSM
tp ≤ 10 ms
Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
aaa-011924ITSM(A)
number of cycles1 10310210
ITSM
Tj(init) = 25 °C max
1/f 2
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
NXP Semiconductors BT148W-600R
SCR Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance
from junction to solderpoint
Fig. 6 - - 15 K/W
printed circuit board mounted; padarea; Fig. 7 - 70 - K/WRth(j-a) thermal resistancefrom junction to
ambient printed circuit board mounted; minimum
footprint; Fig. 8 156 - K/W
Zth(j-sp)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
aaa-011929
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
NXP Semiconductors BT148W-600R
SCR
001aab509
All dimensions are in mm
Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 7. Printed circuit board pad area: SOT223
001aab508
3.8min
1.5min
1.5min(3×)
1.5min
All dimensions are in mm
Fig. 8. Minimum footprint SOT223
NXP Semiconductors BT148W-600R
SCR
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 - 50 200 µA latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C;
Fig. 10 0.17 10 mA holding current VD = 12 V; Tj = 25 °C; Fig. 11 - 0.1 6 mA on-state voltage IT = 2 A; Tj = 25 °C; Fig. 12 - 1.3 1.5 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 13 0.4 1 VVGT gate trigger voltage
VD = 600 V; IT = 0.1 A; Tj = 125 °C;
Fig. 13
0.1 0.2 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA reverse current VR = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-statevoltage VDM = 402 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 14 50 - V/µs
tgt gate-controlled turn-on
time
ITM = 4 A; VD = 600 V; IG = 5 mA; dIG/
dt = 0.2 A/µs; Tj = 25 °C 2 - µs commutated turn-off
time
VDM = 402 V; Tj = 125 °C; ITM = 4 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of
VDRM) 100 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT148W-600R \|BT148W600R	NXP/PHILIPS	N/a	1000	avai	SCR