BT137X600D Fast Delivery |IC PHOENIX CO.,LIMITED

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BT137X600D
4Q Triac
TO-220F BT137X-600D
4Q Triac 9 October 2013 Product data sheet General description
Planar passivated very sensitive gate four quadrant triac in a SOT186A (TO-220F)"full pack" plastic package intended for use in general purpose bidirectional switchingand phase control applications, where high sensitivity is required in all four quadrants.This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Features and benefits Direct triggering from low power drivers and logic ICs• High blocking voltage capability• Isolated package• Planar passivated for voltage ruggedness and reliability• Triggering in all four quadrants• Very sensitive gate Applications General purpose phase control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 65 A
IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3 - 8 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 5 mAIGT gate trigger current 3.5 5 mA
NXP Semiconductors BT137X-600D
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 3.5 5 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 6.5 10 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.5 10 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT137X-600D TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A
NXP Semiconductors BT137X-600D
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3 8 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 65 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 71 A2t I2 t for fusing tp = 10 ms; SIN - 21 A2s
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT137X-600D
4Q Triac
surgeduration(s)10-2 10110-1
003aaa970
IT(RMS)
(A)
f = 50 Hz; Th = 73 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values (°C)-50 1501000 50
003aaa969
IT(RMS)°C(A)
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
003aae690
Ptot
(W)
IT(RMS)(A)0 1084 62
conductionangle(degrees)
formfactora3060901201802.82.21.91.57
α=180°
120°
90°
60°
30°
α = conduction angle a = form factor = IT(RMS)/IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT137X-600D
4Q Triac
003aae693
ITSM
(A)
numberof cycles1 10410310 102
ITSM
Tj(init)=25°C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aae691
10-5 10-4 10-3 10-2 10-1
ITSM
Tj(init)=25°C max
(1)
(2)
tp(s)
ITSM
(A)
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT137X-600D
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full or half cycle; without heatsink
compound; Fig. 6 - 6.5 K/WRth(j-h) thermal resistance
from junction toheatsink full or half cycle; with heatsink
compound; Fig. 6 - 4.5 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 55 - K/W
003aaf915
Zth(j-h)
(K/W)
10-3(s)10-5 1 1010-110-210-4 10-3
(1)(2)
(3)(4)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration Max Unit 2500 V - pF
NXP Semiconductors BT137X-600D
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 5 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 3.5 5 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 3.5 5 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 6.5 10 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 1.6 15 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 8.5 20 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 1.2 15 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 2.5 20 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.5 10 mA on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform 5 - V/µs
tgt gate-controlled turn-ontime ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT137X600D		N/a	960	avai	4Q Triac