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BT132PHN/a4983avaiTriacs logic level
BT132-600D |BT132600DPHIN/a625avaiTriacs logic level
BT132-600D |BT132600DPHILIPSN/a345avaiTriacs logic level


BT132 ,Triacs logic levelGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. ..
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BT132-600D ,Triacs logic levelapplications. These devices I RMS on-state current 1 1 AT(RMS)are intended to be interfaced directl ..
BT134 ,Triacs sensitive gateGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated triacs in a plastic SYMBOL PARAMETER MAX. ..
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BT134 ,Triacs sensitive gateapplications include motor control, voltagesindustrial and domestic lighting, I RMS on-state curren ..
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BZV55-B13 ,ZENER DIODESLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BT132-BT132-600D
Triacs logic level
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT
triacsina plastic envelope, intendedfor use in general purpose BT132- 500D 600D
bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V
control applications. These devices IT(RMS) RMS on-state current 1 1 Aare intendedtobe interfaced directly ITSM Non-repetitive peak on-state current 16 16 A microcontrollers, logic integrated
circuits and other low power gatetrigger circuits.
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 2 gate main terminal 1
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600

VDRM Repetitive peak off-state - 5001 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; Tlead ≤51 ˚C - 1 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 16 A
t = 16.7 ms - 17.6 A2 tI2 t for fusing t = 10 ms - 1.28 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2321
Philips Semiconductors Product specification
Triacs
BT132 series D
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-lead Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
Rth j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.0 5 mA
T2+ G- - 2.5 5 mA
T2- G- - 2.5 5 mA
T2- G+ - 5.0 10 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.6 10 mA
T2+ G- - 4.5 15 mA
T2- G- - 1.2 10 mA
T2- G+ - 2.2 15 mA Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 5 - V/μsoff-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs
BT132 series D
logic level
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus lead temperature Tlead.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 51˚C.
Fig.6. Normalised gate trigger voltage 0.2 0.4 0.6 0.8 1 1.20
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
0.01 0.1 1 100
surge duration / s 100 10000
Number of cycles at 50Hz
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs
BT132 series D
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Zth j-sp (K/W)100
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Triacs
BT132 series D
logic level
MECHANICAL DATA

Dimensions in mm
Net Mass: 0.2 g
Fig.13. TO92 Variant; plastic envelope.
Notes

1. Epoxy meets UL94 V0 at 1/8".
min
12.7 min
5.2 max
0.5623
Philips Semiconductors Product specification
Triacs
BT132 series D
logic level
DEFINITIONS
Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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