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BT131-600E |BT131600EPHIN/a250avaiBT131 series D and E; Triacs logic level


BT131-600E ,BT131 series D and E; Triacs logic levelapplications. These BT131- 600E 800Edevices are intended to be interfaced V Repetitive peak off-sta ..
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BT131-600E
Triacs logic level
Philips Semiconductors Product specification
Triacs BT131 series D and E
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated, sensitive gate triacsina SYMBOL PARAMETER MAX. MAX. UNIT
plastic envelope, intended for useingeneral purpose bidirectional switching BT131- 600D 800D
and phase control applications. These BT131- 600E 800E
devices are intendedto be interfaced VDRM Repetitive peak off-state Vdirectly to microcontrollers, logic voltages 600 800 A
integrated circuits and other low power IT(RMS) RMS on-state current 1 1
gate trigger circuits. ITSM Non-repetitive peak on-state Acurrent 12.5 12.5
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 2 gate main terminal 1
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800

VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 66 ˚C - 1 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 12.5 A
t = 16.7 ms - 13.7 A2 tI2 t for fusing t = 10 ms - 0.78 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current t = 2 μs max - 2 A
PGM Peak gate power t = 2 μs max - 5 W
PG(AV) Average gate power over any 20 ms period - 0.1 W
Tstg Storage temperature -40 150 ˚C Junction temperature - 125 ˚CT2321
Philips Semiconductors Product specification
Triacs
BT131 series D and E
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-lead Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
Rth j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX UNIT
BT131- ...D ...E

IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 mA
T2+ G- - - 5 10 mA
T2- G- - - 5 10 mA
T2- G+ - - 7 10 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 10 15 mA
T2+ G- - - 20 25 mA
T2- G- - - 10 15 mA
T2- G+ - - 10 15 mA Holding current VD = 12 V; IGT = 0.1 A - 1.3 10 10 mA On-state voltage IT = 1.4 A - 1.2 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.2 0.3 - V
Tj = 125 ˚C Off-state leakage VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
current
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT131- ...D ...E

dVcom/dt Critical rate of rise of VD = 400 V; Tj = 125 ˚C; 3 5 - - V/μs
commutation voltage dIcom/dt = 0.5 A/ms;
V/μs
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 20 50 - -
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
turn-on time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs
BT131 series D and E
logic level
Fig.1. Maximum on-state dissipation, Ptot , versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
Fig.4. Maximum permissible rms current I T(RMS) ,
versus lead temperature Tlead.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 66˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0.8 0.4 0.8 1.2
IT(RMS) (A)
Ptot
(W)
Tlead (max)
(°C)
-50 0 50 100 150
IT(RMS)
(A)
Tlead (°C)
ITSM
(A)
10-110-210-310-410-5 tp (S)
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 102 103
Number of cycles at 50Hz
ITSM
(A)
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs
BT131 series D and E
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
Fig.12. Minimum, critical rate of rise of off-state
voltage, dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C)
VT (V)
IT
(A)
00.4 0.8 1.2 1.6 2
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Zth j-sp (K/W)100
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C)
050 100 1501
dVD/dt
Tj °C
(V/μs)
Philips Semiconductors Product specification
Triacs
BT131 series D and E
logic level
MECHANICAL DATA

Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes

1. Epoxy meets UL94 V0 at 1/8".
Plastic single-ended leaded (through hole) package; 3 leads SOT54
Philips Semiconductors Product specification
Triacs
BT131 series D and E
logic level
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS
2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
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