BSX20 ,Leaded Small Signal Transistor General PurposeBSX20HIGH SPEED SATURATED SWITCHESDESCRIPTIONThe BSX20 is a silicon planar epitaxial NPNtransistors ..
BSX32 ,NPN switching transistor
BSX32 ,NPN switching transistor
BSX45/10 ,Leaded Small Signal Transistor General Purpose
BSX45-10 ,Leaded Small Signal Transistor General Purpose
BSX45-10 ,Leaded Small Signal Transistor General Purpose
BZT55C5V6 ,ZENER DIODESAbsolute Maximum RatingsT = 25
BSX20
Leaded Small Signal Transistor General Purpose
BSX20HIGH SPEED SATURATED SWITCHES
DESCRIPTIONThe BSX20isa silicon planar epitaxial NPN
transistorsin Jedec TO-18 metal case. They are
primarily intended for veery high speed saturated
switching applications.
INTERNAL SCHEMATIC DIAGRAMNovember 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-Base Voltage(IE =0) 40 V
VCES Collector-Emitter Voltage (VBE =0) 40 V
VCEO Collector-Emitter Voltage(IB =0) 15 V
VEBO Emitter-Base Voltage(IC =0) 4.5 V Collector Current(t=10 μs) 0.5 A
Ptot Total Dissipationat Tamb≤25oC Tcase≤25oC
Tstg Storage Temperature -65to 200 oC Max. Operating Junction Temperature 200 oC
TO-181/6
THERMAL DATARthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
486 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cut-off
Current(IE =0)
VCB =20V
VCB =20V Tamb =150oC
ICES Collector Cut-off
Current (VBE =0)
VCE =15V Tamb =55oC
VCE =40V
ICEX Collector Cut-off
Current (VBE =-3V)
VCE =15V Tamb =55o C0.6 μA
IBEX Base Cut-off Current
(VBE =-3V)
VCE =15V Tamb =55o C0.6 μA
IEBO Emitter Cut-off Current
(IC =0)
VEB= 4.5V 10 μA
VCER(sus)∗ Collector-Emitter
Sustaining Voltage
(RBE =10Ω) =10 mA 20 V
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =10 mA 15 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =10 mA IB =1 mA =100 mA IB =10 mA =10 mA IB =0.3 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage =10 mA IB =1 mA =100 mA IB =10 mA
0.7 0.85
VBE(on)∗ Base-Emitter On
Voltage =30 μAVCE =20V
Tamb= 100oC
350 mV
hFE∗ DC Current Gain IC =10 mA VCE =1V =100 mA VCE =2V =10 mA VCE =1V
Tamb =-55oC Transition Frequency IC =10 mA VCE=10V 500 600 MHz
CCBO Collector Base
Capacitance =0 VCB =5V 4 pF
CEBO Emitter Base
Capacitance =0 VEB =1V 4.5 pF
ts∗∗ Storage Time VCC =10V IC =10 mA
IB1 =-IB2 =10 mA
613 ns
ton∗∗ Turn-on Time VCC =3V IC =10 mA
IB1 =3 mA
VCC =6V IC =100 mA
IB1 =40 mA
toff∗∗ Turn-off Time VCC =3V IC =10 mA
IB1 =3 mA IB2 =-1.5 mA
VCC =6V IC =100 mA
IB1 =40 mA IB2 =-20 mA
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1% Seetest circuit
BSX202/6
Current GainBase-emitter Saturation Voltage.Collector-emitter SaturationVoltage Current Gain
Transition Frequency.
BSX203/6
Test circuitfortS.
BSX204/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o
E
TO-18 MECHANICAL DATABSX20
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consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
licenseis grantedby implicationor otherwise underany patentor patentrightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change without notice.This publication supersedes andreplacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BSX20
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