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BSS98SeimensN/a962avaiN-Channel SIPMOS Small-Signal Transistor
BSS98INFINEONN/a1330avaiN-Channel SIPMOS Small-Signal Transistor
BSS98siemensN/a1000avaiN-Channel SIPMOS Small-Signal Transistor


BSS98 ,N-Channel SIPMOS Small-Signal Transistor BSS 98 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V = 0. ..
BSS98 ,N-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BSS98 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
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BSS98
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 98
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level 1 2
5 VPT05548
q Vega,” = 0.8...1.6 v
Pin 1 Pin 2 Pin 3
Type VDS ID RDS(on) Package Marking
BSS 98 50 V 0.3 A 3.5 n TO-92 SS98
Type Ordering Code Tape and Reel Information
BSS 98 Q62702-S053 E6288
BSS 98 Q62702-S517 E6296
BSS 98 Q62702-S635 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage Vros 50 V
Drain-gate voltage VDGR
Rss = 20 kg 50
Gate source voltage VGs i 20
ESD Sensitivity as per MlL-STD 883 Class 1
Continuous drain current ID A
TA = 25 ( 0.3
DC drain current, pulsed leuls
TA = 25 ( 1.2
Power dissipation Ptot W
TA = 25 ( 0.63
Data Sheet 1 05.99
.lnltinlegon BSS 98
ec no 0 IL',.-"
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) Rth f 200 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)Dss V
VGs = 0 V, ID = 0.25 mA, T]: 25 ( 50 - -
Gate threshold voltage VGSM
bfss"bs, ID = 1 mA 0.8 1.2 1.6
Zero gate voltage drain current IDSS
VDS = 50 V, VGS = 0 V, 7] = 25 "C - 0.05 0.5 pA
vbs=50v,v'ss=0v,ri=125''c - - 5
"os=301/,vss=01/,Ti=25''C - - 100 nA
Gate-source leakage current IGSS nA
Vss=20V,VDs=01/ - 10 100
Drain-Source on-state resistance RDSM) Q
VGS=10V, ID=0.3A - 1.8 3.5
vss = 4.5 V, ID = 0.3 A - 2.8 6
Data Sheet 2 05.99
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