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BSS89INFINEONN/a12321avaiN-channel enhancement mode vertical D-MOS transistor
BSS89seimensN/a7100avaiN-channel enhancement mode vertical D-MOS transistor
BSS89PHILIPSN/a10avaiN-channel enhancement mode vertical D-MOS transistor
BSS89PHN/a50avaiN-channel enhancement mode vertical D-MOS transistor


BSS89 ,N-channel enhancement mode vertical D-MOS transistor BSS 89 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V = 0. ..
BSS89 ,N-channel enhancement mode vertical D-MOS transistor
BSS89 ,N-channel enhancement mode vertical D-MOS transistor
BSS89 ,N-channel enhancement mode vertical D-MOS transistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 240 - -GS ..
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BSS89
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 89
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level I 2
q vesuh) = 0.8...2.0V 3 VPTOM
Pin 1 Pin 2 Pin 3
Type VDS ID RDs(on) Package Marking
BSS 89 240 V 0.3 A 6 Q TO-92 SS89
Type Ordering Code Tape and Reel Information
BSS 89 Q62702-S519 E6288
BSS 89 Q62702-S619 E6296
BSS 89 062702-8385 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDs 240 V
Drain-gate voltage VDGR
Rss = 20 kg 240
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 25 ( 0.3
DC drain current, pulsed leuIs
TA = 25 ( 1.2
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 1 05.99
tlniinlmm BSS 89
ec n o 09y
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) Rth f 125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Electrical Characteristics, at T] = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)Dss V
Vss = 0 V, ID = 0.25 mA, T]: 25''C 240 - -
Gate threshold voltage VGSM
bfss=Vbs, ID = 1 mA 0.8 1.5 2
Zero gate voltage drain current IDSS pA
bbs=240V,Vss=0V, Tj=25°c - 0.1 1
VDS=240V,VGS=0V,TJ-=125°C - 10 100
VDS=60V,VGS=OV, Tj=25°C - - 0.2
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-state resistance RDS(on) Q
VGS= 10 V, ID=0.3A - 4.5 6
vss = 4.5 V, ID = 0.3 A - 5.3 10
Data Sheet 2 05.99
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