IC Phoenix
 
Home ›  BB28 > BSS229,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSS229 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BSS229SeimensN/a30avaiSIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)


BSS229 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) BSS 229

BSS229
N-Channel SIPMOS Small-Signal Transistor
( Infineon
technologies
SIPMOS® Small-Signal Transistor
o Vos 250V
0 ID 0.07 A
o RDSM 1009
o N channel
0 Depletion mode
0 High dynamic resistance
0 Available grouped in VGSW
BSS 229
2iirs:iigit,,, 3
Type Ordering Tape and Reel Pin Configuration Marking Package
Code Information 1 2 3
BSS 229 Q62702-S600 E6296: 1500 pcs/reel; G D S SS229 TO-92
2 reels/carton; source first
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 250 V
Drain-gate voltage, Rss = 20 kn VDGR 250
Gate-source voltage ' -h- 20
ESD Sensitivity (HBM) as per MIL-STD 883 - Class 1
Continuous drain current, TA = 25 ( h, 0.07 A
Pulsed drain current, TA = 25 ( IDpuls 0.21
Max. power dissipation, TA = 25 ( Ptot 0.63 W
Operating and storage temperature range T, T, stg - 55 ... + 150 "C
Thermal resistance, chip-ambient RthJA s 200 K/W
(without heat sink)
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Data Sheet 05.99
!eiy,f,i,y,tty,
ec no 09y
BSS 229
Electrical Characteristics
at T, = 25 ''C, unless otherwise specified.
Parameter
Symbol
Values
Static Characteristics
Drain-source breakdown voltage
VGS = - 3 V, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage
VDS=3V,ID=1mA
VGS(th)
Drain-source cutoff current
VDS=250V, "ss---3V
T, = 25 (
T =125°C
Gate-source leakage current
VGS = 20 V, ' = 0
Drain-source on-resistance
"ss = 0 V,1D = 0.014 A
RDS(on)
Dynamic Characteristics
Forward transconductance
Input capacitance
VGS= 0, VDS= 25V,f=1MHz
Output capacitance
"ss--0,rrDs=25V,f--1MHz
Reverse transfer capacitance
VGS=01 VDS=25VIf= 1 MHz
Turn-on time ton, (ton = tum”) + t,)
VDD=30Vs FrGs---2V... + 5V,RGS=5OQ,
h, = 0.15 A
Turn-off time tom (tsr-- tdom + tr)
VDD=30VI VGS=_2V--- + 5V,RGS=5OQ,
h, = 0.15 A
Data Sheet
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED