BSS135 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSS135
N-Channel SIPMOS Small-Signal Transistor
SUEMENS
SIPMOS® Small-Signal Transistor
o VDS 600 V
0 h, 0.080 A
o RDSwn) 60 n
o N channel
0 Depletion mode
0 High dynamic resistance
0 Available grouped in VGSm.)
BSS 135
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Type Ordering Tape and Reel Pin Configuration Marking Package
Code Information 1 2 3
BSS 135 Q67000-S237 E6325: 2000 pcs/carton; G D S SS135 TO-92
Ammopack
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDs 600 V
Drain-gate voltage, Rss = 20 k9 VDGR 600
Gate-source voltage VGS i 14
Gate-source peak voltage, aperiodic ' i 20
Continuous drain current, TA = 42 ''C h, 0.080 A
Pulsed drain current, T A = 25 "C IDpuls 0.24
Max. power dissipation, T, = 25 ''C Ptot 1.0 W
Operating and storage temperature range Tj, Tstg - 55 ... + 150 "C
Thermal resistance, chip-ambient RthJA s 125 KNV
(without heat sink)
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Semiconductor Group
SIEMENS
BSS 135
Electrical Characteristics
at T, = 25 'C, unless otherwise specified.
Parameter
Symbol
Values
Static Characteristics
Drain-source breakdown voltage
p2s=-31/, ID=0.25 mA
V(BR)DSS
Gate threshold voltage
VDS=3V,ID=1mA
VGS(th)
Drain-source cutoff current
VDS=600V, Kss=-3V
T, = 25 ''C
T, = 125 ''C
Gate-source leakage current
VGS = 20 V, VDs = 0
Drain-source on-resistance
' = 0V, h, = 0.01 A
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS 2 2 X I, X RDS(on)maxa h, = 0.01 A
Input capacitance
"ss=-3V,Fas=25V,f=1MFlz
Output capacitance
'rGs=-3V,p1os=25V,f=1MHir
Reverse transfer capacitance
"ss=-3V,VDs=25V,f-=1MHz
Turn-on time ton, (ton = tam) + tr)
VDD=30V, "ss---3V... +5V,Rss=50f2,
ID=0.2A
td(on)
Turn-off time toe, (U-- tdom + tf)
VDD=30V, Kss=-3V... +5V,Rss=50f2,
ID=0.2A
Semiconductor Group
