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BSR31NXP/PHILIPSN/a15000avai60 V, 1 A PNP medium power transistor
BSR33NXPN/a790avai80V PNP MEDIUM POWER TRANSISTOR IN SOT89


BSR31 ,60 V, 1 A PNP medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSR33 ,80V PNP MEDIUM POWER TRANSISTOR IN SOT89applications• Thick and thin-film circuits.2DESCRIPTIONPNP medium power transistor in a SOT89 plast ..
BSR41 ,60 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSR42 ,SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
BSR42 ,SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89
BZT52B18S , SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 3 to 39 Volts POWER RATING 410 mWatts
BZT52-B18S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B5V1S , SURFACE MOUNT SILICON ZENER DIODES


BSR31-BSR33
60 V, 1 A PNP medium power transistor

NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
FEATURES
High current (max. 1 A) Low voltage (max. 80 V).
APPLICATIONS
Telephony and general industrial applications Thick and thin-film circuits.
DESCRIPTION

PNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
MARKING
ORDERING INFORMATION
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.
Note
Pulse test: tp = 300 μs; δ < 0.01.
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
DATA SHEET STATUS
Notes
Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and
conditions of commercial sale, as published at
http:///profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)

described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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