BSP88 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 240 - -GS ..
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BZT03C-200 ,Silicon Z-Diodes and Transient Voltage SuppressorsElectrical CharacteristicsT = 25
BSP88
Low Voltage MOSFETs
Infineon
technologies
SIPMOS co Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level
. vesah) = 0.6...1.2V
BSP 88
1 VP80556O
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking
BSP 88 240 V 0.32 A 8 f2 SOT-223 BSP 88
Type Ordering Code Tape and Reel Information
BSP 88 Q67000-S070 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDs 240 V
Drain-gate voltage VDGR
Rss = 20 kg 240
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 25 "C 0.32
DC drain current, pulsed leuIs
TA = 25 ( 1.28
Power dissipation Ptot W
TA = 25 ( 1.7
Data Sheet 1 05.99
Infineon BSP 88
technologies
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air Rth f 72 KNV
Thermal resistance, junction-soldering point 1) Rth f 12
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1 55/ 150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGs = 0 V, ID = 0.25 mA, T, = 25 ( 240 - -
Gate threshold voltage VGsah)
Kss=vbs, ID = 1 mA 0.6 0.8 1.2
Zero gate voltage drain current IDSS
VDS = 240 V, VGS = 0 V, 7] = 25 ( - 0.1 1 pA
VDS=240V,VGS=0V, Tj=125°C - 10 100
bbs=100V,VGs=0V, Tj=25°c - - 100 nA
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-state resistance RDS(0n) Q
VGs = 4.5 V, b = 0.32 A - 4 8
Vss=2.8V,lro=14mA - 6 15
Data Sheet 2 05.99
