IC Phoenix
 
Home ›  BB28 > BSP75 E6327-BSP75E6327,HITFET Smart Low Side Power Switch
BSP75 E6327-BSP75E6327 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BSP75 E6327 |BSP75E6327INFINEONN/a11391avaiHITFET Smart Low Side Power Switch
BSP75E6327N/a17394avaiHITFET Smart Low Side Power Switch


BSP75E6327 ,HITFET Smart Low Side Power SwitchGeneral Description N channel vertical power FET in Smart Power Technology. Fully protected by embe ..
BSP75N ,Smart Low Side SwitchesGeneral DescriptionN channel vertical power FET in Smart Power Technology. Fully protected by embed ..
BSP76 ,Smart Low Side SwitchesGeneral DescriptionN channel vertical power FET in Smart SIPMOS technology. Fully protected by emb ..
BSP76 ,Smart Low Side SwitchesFeatures Product Summary Logic Level Input Drain source voltage V 42 VDS Input Protection (ESD) O ..
BSP762T ,Smart Power High-Side-SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BSP762T . ,Smart Power High-Side-SwitchBlock Diagram+ VbbVoltageGateOvervoltage Currentsourceprotection limit protectionVLogicOUTLimit for ..
BZT03-C150 ,Voltage regulator diodes
BZT03-C150 ,Voltage regulator diodes
BZT03C-150 ,Voltage regulator diodes
BZT03C16 ,Silicon Z-Diodes and Transient Voltage SuppressorsBZT03C...Vishay TelefunkenSilicon Z–Diodes and Transient Voltage Suppressors
BZT03-C16 ,Voltage regulator diodes
BZT03-C16 ,Voltage regulator diodes


BSP75 E6327-BSP75E6327
HITFET Smart Low Side Power Switch
HITFET® BSP 75
Smart Lowside Power Switch
Features
Logic Level Input
• Input protection (ESD)
• Thermal shutdown (with restart)
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
Application
All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description

N channel vertical power FET in Smart Power Technology. Fully protected by embeddedprotection functions.
Vbb
LOAD
Product Summary
VDS55VRDS(ON)550mΩID(lim)1AID(Nom)0.7AEAS550mJ
HITFET® BSP 75
Maximum Ratings at Tj=25°C unless otherwise specified

1) R=internal resistance of the load dump test pulse generator LD200
HITFET® BSP 75
Electrical Characteristics
Parameter and Conditions

at Tj = 25 °C, unless otherwise specified
Static Characteristics

Drain source clamp voltage ID = 10 mATj =-40...+150°C:V
Input threshold voltage ID = 10 mA
Input currentnormal operation, ID VIN = 5 Vcurrent limitation mode, ID=ID(lim):
after thermal shutdown, ID=0 A:
On-state resistance
ID = 0.7 A, VIN = 5 VTj=25°C:j=150°C:
On-state resistance
ID = 0.7 A, VIN = 10 VTj=25°C:j=150°C:
Dynamic characteristics

Turn-on timeVINto 90% ID:
RL = 22 Ω, VIN= 0 to 10 V, Vbb= 12 V
HITFET® BSP 75
Parameter and Conditions

at Tj = 25 °C, unless otherwise specified
Protection Functions

Thermal hysteresis
Unclamped single pulse inductive energyD(ISO)=0.7 A, Vbb=32 VTj=25 °Cj=150 °C
Inverse Diode
Circuit Description

The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designedfor all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-
plications.
Protection functions
Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about
63 V) when inductive loads are switched off.Current limitation: By means of an internal current measurement the drain current is lim-
ited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This opera-tion leads to an increasing junction temperature until the overtemperature threshold is
reached.Overtemperature and short circuit protection: This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction tem-perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
HITFET® BSP 75
Block diagram
Terms
HITFET
DINDVDS1INbbL
Input circuit (ESD protection)

ESD zener diodes are not designed for DC
current.
Inductive and overvoltage output clamp

VIN
VDS
VBB
VDS(AZ)
Turn on into overload or short circuit

VIN
ID(lim)
Shut down by overtemperature and restart by
cooling. Current internally limited at ID(lim).
HITFET® BSP 75
Maximum allowable power dissipation
Ptot = f (TC)

Ptot [W]
TC [°C]
On-state resistanceRON = f (Tj); ID= 0.7 A; VIN= 5 V

RON [mΩ]
Tj [°C]
On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 10 V

RON [mΩ]
Tj [°C]
Typ. input threshold voltage
VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V

VIN(th) [V]
Tj [°C]
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED