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BSP615S2L
Low Voltage MOSFETs
BSP615S2L
OptiMOS Power-Transistor
Product Summary
Feature• N-Channel
• Enhancement mode
• Logic Level
SOT 223
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
BSP615S2L
Thermal Characteristics
Characteristics
Static CharacteristicsDevice on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
BSP615S2L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
BSP615S2L
1 Power dissipationtot = f (TC)
parameter: VGS≥ 4 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.4 BSP615S2L
tot
2 Drain currentD = f (TC)
parameter: VGS≥ 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
BSP615S2L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSP615S2L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = --
-2 10
-1 10 10 10 10
BSP615S2L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
0.5
1.5
2.5
3.5
4.5
5.5
BSP615S2L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
20
40
60
80
100
120
140
160
180
200
220
240
BSP615S2L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
0.4
0.8
1.2
1.6
2.4
2.8
3.2
3.6
4.4
4.8
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
BSP615S2L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 1.4 A, VGS = 10 V
20
40
60
80
100
120
140
160
180
200
220
240
BSP615S2L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
BSP615S2L
