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BSP373INFINEONN/a50avaiLow Voltage MOSFETs
BSP373SIEMENSN/a742avaiLow Voltage MOSFETs


BSP373 ,Low Voltage MOSFETs BSP 373 ®SIPMOS Small-Signal Transistor• N channel Enhancement mode Avalanche rated V ..
BSP373 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 0 ˚C 100 - -GS D ..
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BSP373
Low Voltage MOSFETs
Infineon
technologies
BSP 373
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Avalanche rated
1 vpsosseo
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking
BSP 373 100 V 1.7 A 0.3 Q SOT-223 BSP 373
Type Ordering Code Tape and Reel Information
BSP 373 Q67000-S301 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 28 "C 1.7
DC drain current, pulsed IDpuls
TA = 25 ( 6.8
Avalanche energy, single pulse EAS mJ
ID=1.7A, VDD-- 25V, Rss-- 259
L=23.3 mH, Tj=25 ( 45
Gate source voltage VGS i 20 V
Power dissipation Ptot W
TA = 25 "C 1.8
Data Sheet 1 05.99
Infineon
technologies
BSP 373
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
-55 ... + 150
Storage temperature
-55 ... + 150
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
55/150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter
Symbol
Values
Static Characteristics
Drain- source breakdown voltage
VGS=OV,/D=O.25mA, 7}:0°C
V(BR)DSS
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
VDS=1OOV,VGS=OV,7]=25OC
VDS=100V,VGS=0V, 71:125 (
Gate-source leakage current
VGS=20V, VDS=OV
Drain-Source on-state resistance
RDS(on)
Data Sheet
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