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BSP319
SIPMOS Small-Signal Transistor
Infineon
technologies
BSP 319
SIPMOS co Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level
. Avalanche rated
. VGS(th) = 1.2 ...2.0 V
1 vpsosseo
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDs(on) Package Marking
BSP 319 50 V 3.8 A 0.07 n SOT-223 BSP 319
Type Ordering Code Tape and Reel Information
BSP 319 Q67000-S273 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 29 ( 3.8
DC drain current, pulsed IDpuls
TA = 25 "C 15
Avalanche energy, single pulse EAS mJ
ID = 3.8 A, VDD = 25 V, Rss = 25 Q
L=6.2mH,Tj=25°C 90
Gate source voltage VGS , 20 V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation Ptot W
TA = 25 ( 1.8
Data Sheet 1 05.99
Infineon BSP 319
technologies
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA f 70 KM
Thermal resistance, junction-soldering point 1) RthJS f 10
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1 55/ 150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
Vss=0V,lrs=0.25 mA, Tj=O°C 50 - -
Gate threshold voltage VGSM
Kss--vbs, ID = 1 mA 1.2 1.6 2
Zero gate voltage drain current IDSS pA
"os=501/,vss=01/,Tj=25oc - 0.1 1
bbs=501/,vss=01/,Tj=125''C - 10 100
Gate-source leakage current IGSS nA
VGS=20V,VDS=0V - 10 100
Drain-Source on-state resistance RDS(on) Q
Vss = 5 V, ID = 2.4 A - 0.06 0.07
Data Sheet 2 05.99
