BSP300 ,SIPMOS Small-Signal TransistorBSP 300 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Avalanche rated• V = 2.0... ..
BSP300 ,SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 800 - -GS ..
BSP304A ,P-channel enhancement mode vertical D-MOS transistors
BSP304A ,P-channel enhancement mode vertical D-MOS transistors
BSP304A ,P-channel enhancement mode vertical D-MOS transistors
BSP315 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -50 - -GS ..
BZG05C3V6 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP300
SIPMOS Small-Signal Transistor
BSP 300
SIPMOS ® Small-Signal Transistor• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.0... 4.0 V
Maximum Ratings
BSP 300
Maximum Ratings1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSP 300
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSP 300
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSP 300
Power dissipation tot = ¦(TA)20406080100120°C160TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0 tot
Drain current D = ¦(TA)
parameter: VGS ³ 10 V20406080100120°C160TA
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.20 D
Safe operating area D = ¦(VDS)
parameter: D = 0.01, TC = 25°C
-3 10
-2 10
-1 10 10
A D
Transient thermal impedance th JA = ¦(tp)
parameter: D = tp / T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10 10
K/W thJC
BSP 300
Typ. output characteristics D = ¦(VDS)
parameter: tp = 80 µs , Tj = 25 °C481216V24VDS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.45 D
Typ. drain-source on-resistance DS (on) = ¦(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.000.040.080.120.160.200.240.28A0.34ID
10
15
20
25
30
35
40
45
50
55
65 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µsDS³ 2 x ID x RDS(on)max
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0 D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,DS³2 x ID x RDS(on)max
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.50 fs
