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BSP230NXP/PHILIPSN/a4000avaiP-channel vertical D-MOS intermediate level FET


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BSP230
P-channel vertical D-MOS intermediate level FET

Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
FEATURES
Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.
APPLICATIONS
Line current interruptor in telephone sets Relay, high speed and line transformer drivers.
DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
Device mounted on an epoxy printed-circuit board, 40×40× 1.5 mm; mounting pad for drain lead minimum6 cm2.
CHARACTERISTICS
=25 °C unless otherwise specified.
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
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