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BSP206 ,P-channel enhancement mode vertical D-MOS transistor
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BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP19AT1
Small Signal A/SW NPN
NPN Silicon
Epitaxial T ransistor
This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT-223 package which is designed for
medium power surface mount applications. High V oltage: V(BR)CEO of 250 and 350 Volts. The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die Available in 12 mm Tape and Reel
T1 Configuration – 7 inch/1000 unit reel
T3 Configuration – 13 inch/4000 unit reel PNP Complement is BSP16T1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
DEVICE MARKING
THERMAL CHARACTERISTICS Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
COLLECTOR 2,4
BASE
EMITTER 3
