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BSP17 E6327
N-Channel SIPMOS Small-Signal Transistor
BSP 17
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Maximum Ratings
BSP 17
Maximum Ratings1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSP 17
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSP 17
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSP 17
Power dissipation tot = ƒ(TA)20406080100120°C160A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0 tot
Drain current D = ƒ(TA)
parameter: VGS ≥ 10 V20406080100120°C160A
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.4 D
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Transient thermal impedance th JA = ƒ(tp)p / T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10 10
K/W thJC
BSP 17
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs , Tj = 25 °C
0.00.51.01.52.02.53.03.54.0V5.0DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.5 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C
0.00.51.01.52.02.53.03.5A4.5D
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.32 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 μsD
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 μs,
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0 fs
