BSP129 ,Low Voltage MOSFETsFeaturesV 240 VDS• N-channelR 6ΩDS(on),max• Depletion modeI 0.05 ADSS,min• dv /dt ratedSOT-223Type ..
BSP130 ,N-channel enhancement mode vertical D-MOS transistorAPPLICATIONS4 drain• Line current interruptor in telephone sets• Relay, high-speed and line transfo ..
BSP130 ,N-channel enhancement mode vertical D-MOS transistor
BSP135 ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =-3 V, I =250 µA 600 - - V(BR)DSS GS DV V =3 V, I ..
BSP135 ,Low Voltage MOSFETsFeaturesV 600 VDS• N-channelR 60ΩDS(on),max• Depletion modeI 0.02 ADSS,min• dv /dt ratedSOT-223Type ..
BSP149 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP129
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
BSP129
SIPMOS® Small-Signal-Transistor
Product Summary
Features VDS 240 V
. N-channel
RDS(on),max 6
. De Ietion mode
p lDSSmin 0.05
. dv/dt rated
SOT-223
drain pins 2, 4
source pin3
Type Package Ordering Code Tape and Reel Information Marking
BSP129 SOT-223 Q67000-SO73 E6327: 1000 pcs/reel BSP129
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TA=25 'C 0.35 A
TA=70 'C 0.28
Pulsed drain current lepuBe TA=25 'C 1.4
1=0.36 A,
. Vos=192 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage VGS :20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Ptot TA=25 'C 1.8 W
Operating and storage temperature Ts, Tsta -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.0 page 1 2003-03-28
CP""''"
Infineon
lechnologies
BSP129
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4) Rmos - - 25 KAN
SMD version, device on PCB RmJA minimal footprint - - 115
6 cm2 cooling areal) - - 70
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-3 V, I D=250 pA 240 - - V
Gate threshold voltage Vegan) VDS=3 V, ID=108 pA -2.1 -1.4 -1
. VDS=24O V,
Drain-source leakage current h, (off) Ves=-3 V, Tj=25 ''C - - 0.1 pA
Vos=240 V, 10
VGS=-3 v, Tj=125 "C - -
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 10 nA
Saturated drain current loss Vss--0 V, Vos=10 V 50 - - mA
Drain-source on-state resistance RDS(on) VGS=0 V, I D=25 mA - 6.5 20 Q
Vss=10 V, ID=0.35 A - 4.2 6.0
IVDS|>ZIIDIRDS(on)max:
Transconductance gfs [0:028 A 0.18 0.36 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 2 2003-03-28
