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BSP030
N-channel enhancement mode field-effect transistor
BSP030N-channel enhancement mode field-effect transistor
Rev. 04 — 26 July 2000 Product specification DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSP030 in SOT223.
Features TrenchMOS™ technology Fast switching Low on-state resistance Logic level compatible Surface mount package.
Applications Motor and actuator driver Battery management High speed, low resistance switch.
Pinning information TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT223, simplified outline and symbol gate (g)
SOT223 N-channel MOSFET drain (d) source (s) drain (d)
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C − 30 V drain current (DC) Tsp =25 °C; VGS= 4.5V − 10 A
Ptot total power dissipation Tsp =25°C − 8.3 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS=10 V; ID=5A 2030mΩ
VGS= 4.5 V; ID= 2.5A 3050mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 30 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 30 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tsp =25 °C; VGS= 4.5V;
Figure2 and3 10 A
Tsp= 100 °C; VGS= 4.5V; Figure2 − 6.3 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs;
Figure3 40 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 8.3 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 9A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs − 40 A
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder
point
mountedona metal clad substrate;
Figure4 K/W
Rth(j-a) thermal resistance from junction to ambient mountedona printed circuit board;
minimum footprint
100 K/W
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25 °C30 43 − V= −55 °C27 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 1 2 2.8 V= 150°C 0.6 −− V= −55°C −− 3.5 V
IDSS drain-source leakage current VDS=24 V; VGS =0V =25°C − 10 100 nA= 150°C −− 10 μA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V − 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =5A;
Figure7 and8 =25°C − 20 30 mΩ
VGS =5V; ID= 2.5A;
Figure7 and8 =25°C − 30 50 mΩ= 150°C −− 85 mΩ
Dynamic characteristicsgfs forward transconductance VDS =5V; ID= 5.5A;
Figure11 12 − S
Qg(tot) total gate charge ID=5 A; VDS =15V;
VGS =10V; Figure14 24 40 nC
Qgs gate-source charge − 3.3 − nC
Qgd gate-drain (Miller) charge − 7.4 − nC
Ciss input capacitance VGS =0V; VDS =24V;=1 MHz; Figure12 770 − pF
Coss output capacitance − 265 − pF
Crss reverse transfer capacitance − 180 − pF
td(on) turn-on delay time VDD=15 V; RD =15Ω;
VGS =10V; RG =6Ω 8 − ns turn-on rise time − 10 − ns
ton turn-on time − 18 35 ns
td(off) turn-off delay time − 24 − ns turn-off fall time − 20 − ns
toff turn-off time − 44 150 ns
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor
Source-drain diodeVSD source-drain (diode forward)
voltage= 1.25 A; VGS =0V;
Figure13 0.73 1.0 V
trr reverse recovery time IS= 1.25A;
dIS/dt= −100 A/μs;
VGS =0V; VDS =25V 120 − ns recovered charge − 150 − nC
Table 5: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BSP030
N-channel enhancement mode field-effect transistor
