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BSO615NVINFINEONN/a640avaiLow Voltage MOSFETs
BSO615NVINFINEON ?N/a60avaiLow Voltage MOSFETs


BSO615NV ,Low Voltage MOSFETsFeaturesDrain source voltage 60 VV• Dual N ChannelDSDrain-Source on-state resistance 0.12• Enhancem ..
BSO615NV ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage 60 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
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BSO615NV
Low Voltage MOSFETs
( Infineon
technologies
Preliminary Data
SIPMOS© Small-Signal-Transistor
Features
0 Dual N Channel
. Enhancement mode
. Avalanche rated
BSO 615NV
Product Summary
Drain source voltage VDS 60 V
Drain-Source on-state resistance RDS(on) 0.12 C2
Continuous drain current ho 3.1 A
o d v/dt rated
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:: E 4 (,iij.t 5: C, VPSOS121
Top View SlS00058
Type Package Ordering Code
BSO 615NV SO 8 Q67041-S2844
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current, one channel active ID 3.1 A
Pulsed drain current, one channel active IDpuIse 12.4
TA = 25 (
Avalanche energy, single pulse EAS 60 mJ
ID= 3.1A, VDD-- 25 V, Rss-- 25 Q
Avalanche current,periodic limited by Timax [AR 3.1 A
Avalanche energy, periodic limited by Timex EAR 0.2 mJ
Reverse diode d v/dt dv/dt 6 kV/ps
ls = 3.1 A, VDS = 20 V, di/dt= 200 Alps,
ijax = 150 ''C
Gate source voltage VGS i20 V
Power dissipation, one channel active Ptot 2 W
TA = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tsta -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
Infineon BSO 615NV
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 35 K/W
Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 100
Thermal resistance @ 10 sec., Rth(JA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 60 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGs = VDs VGSM 2.1 3 4
ID = 20 pA
Zero gate voltage drain current IDSS pA
VDS=60V, VGS=0V, Tj=25°C - 0.1 1
VDS=60V, VGS=0V, Tj=150°C - 10 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) - 0.09 0.12 Q
VGS = 10 V, II): 3.1 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
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