BSO613SPV ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
BSO615 ,SIPMOS Small-Signal-TransistorCharacteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO615C . ,Low Voltage MOSFETsCharacteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO615N ,Low Voltage MOSFETsFeatures Product SummaryDrain source voltage 60 VV• Dual N ChannelDSDrain-Source on-sta ..
BSO615N . ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage 60 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D1.2 1.6 2Gat ..
BSO615N .. ,Low Voltage MOSFETsCharacteristics, at T = 25 ˚C, unless otherwise specifiedjParameter Symbol Values Unitmin. typ. max ..
BZG04-8V2 ,Transient voltage suppressor diodes
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSO613SPV
Low Voltage MOSFETs
Preliminary dataBSO613SPV
SIPMOS Small-Signal-Transistor
Features P-Channel Enhancement mode Avalanche rated dv/dt rated
Product Summary
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO613SPV
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Preliminary dataBSO613SPV
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Preliminary dataBSO613SPV
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
Preliminary dataBSO613SPV
Power Dissipationtot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.8
tot
Drain currentD = f (TA)
parameter: V‡ 10 V
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.8
Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C2
-2 -10
-1 -10 -10 -10 -10
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T3
-3 10
-2 10
-1 10 10 10 10
thJC
Preliminary dataBSO613SPV
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: t= 80 μs
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
-8.5
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: V
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
0.36
DS(on)
Typ. transfer characteristics ID= f ( VGS )DS‡ 2 x ID x RDS(on)max
parameter: tp = 80 μs
-1
-2
-3
-4
-5
-6
-7
-8
-10
Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
