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BSO305NINFINEONN/a5000avaiDual N-Channel SIPMOS Small-Signal Tr...


BSO305N ,Dual N-Channel SIPMOS Small-Signal Tr...FeaturesDrain source voltage 30 V• Dual N Channel VDSDrain-Source on-state resistance 0.035• Enhanc ..
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BSO305N
Dual N-Channel SIPMOS Small-Signal Tr...
( Infineon
technologies
Preliminary Data
SIPMOS® Small-Signal-Transistor
Features
. Dual N Channel
. Enhancement mode
o Avalanche rated
BSO 305N
Product Summary
Drain source voltage VDs 30 V
Drain-Source on-state resistance RDSWD 0.035 Q
Continuous drain current ho 6 A
q Logic Level
. d v/dt rated
SIC (F:% 2ll01
El; in: DI
S2IE (ir) 3:02
(325:4 t1rf, i302
S VPS05121
Top View SlS00058
Type Package Ordering Code
BSO 305 N so 8 Q67041-S4028
Maximum Ratings, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current, one channel active ID 6 A
TC: 25''C, TA-- 25 (
Pulsed drain current, one channel active leuIse 24
TC = 25 (
Avalanche energy, single pulse EAS 100 mJ
ID=6A, VDD=25V, RGS=25Q
Avalanche current,periodic limited by ijax IAR 6 A
Avalanche energy, periodic limited by Timax EAR 0.2 mJ
Reverse diode d v/dt dv/dt 6 kV/ps
IS = 6 A, VDS = 24 V, di/dt = 200 Alps,
ijax = 150 ''C
Gate source voltage VGS :20 V
Power dissipation, one channel active Ptot 2 W
To = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tsta -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
( £11055: BSO305N
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 35 K/W
Thermal resistance @ 10 sec., min. footprint RthUA) - - 90
Thermal resistance @ 10 sec., Rth(JA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter - Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ID = 0.25 mA, r, = 25 (
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 30 pA
Zero gate voltage drain current IDSS pA
1/bs=30v,i/tss=0v,T=2r'C - 0.1 1
VDS=30V, VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 4.5 V, ID = 5 A - 0.033 0.05
VGS = 10 V, ID = 6 A - 0.023 0.035
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
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