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BSO303SPINFINEON ?N/a852avaiLow Voltage MOSFETs


BSO303SP ,Low Voltage MOSFETsFeatureV -30 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.9 AD• Logic Level• 150°C operating t ..
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BZG04-16 ,16V suppressor diodeElectrical CharacteristicsT = 25

BSO303SP
Low Voltage MOSFETs
Preliminary dataBSO303SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature

• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO303SP
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO303SP
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO303SP
1 Power dissipation
tot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2 BSO303SP
tot
2 Drain current
D = f (TA)
parameter: |VGS|≥ 10 V
-1
-2
-3
-4
-5
-6
-7
-8
-10 BSO303SP
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , T
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedance
thJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO303SP
thJS
Preliminary dataBSO303SP
5 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
30
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: VGS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.1
on)
7 Typ. transfer characteristics
D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
40
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
40
Preliminary dataBSO303SP
9 Drain-source on-resistance
DS(on) = f(Tj)
parameter: ID = -8.9 A, VGS = -10 V
10
12.5
15
17.5
20
22.5
25
30
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS
-60-2020601001600
0.5
1.5
2.5
12 Forward character. of reverse diode
F = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO303SP
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
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