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BSO302SNINFINEONN/a44avaiSingle N-Channel SIPMOS Small-Signal ...


BSO302SN ,Single N-Channel SIPMOS Small-Signal ...Features Product SummaryDrain source voltage 30 VV• Single N channelDSDrain-Source on-s ..
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BSO302SN
Single N-Channel SIPMOS Small-Signal ...
( Infineon
technologies
Preliminary Data
SIPMOS© Small-Signal-Transistor
Features
q Single N channel
. Enhancement mode
. Avalanche rated
BSO 302SN
Product Summary
Drain source voltage Vros 30 V
Drain-Source on-state resistance RDSWO 0.013 f2
Continuous drain current ID 9.8 A
q Logic Level
SE1 BID
.dv/dtrated 30:2 H 7:10
s u: 3 (ri)) 5 CI] f) 1L1 4
cu:4 53m VPS05121
Top View slsooom
Type Package Ordering Code
BSO 302SN SO 8 Q67041-S4029
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter - Symbol Value Unit
Continuous drain current ID 9.8 A
TC = 25 (
Pulsed drain current leuIse 39.2
TC = 25 (
Avalanche energy, single pulse EAS 250 mJ
ID = 9.8 A, VDD = 25 V, Rss = 25 Q
Avalanche current,periodic limited by Timax [AR 9.8 A
Avalanche energy, periodic limited by Timax EAR 0.2 mJ
Reverse diode dv/dt dv/dt 6 kV/ps
IS = 9.8 A, VDs = 24 V, di/dt = 200 Alps,
ijax = 150 ''C
Gate source voltage VGS k- 20 V
Power dissipation Ptot 2 W
To = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tstq -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
( nfineon BSO 302SN
technologies
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 25 K/W
Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 75
Thermal resistance @ 10 sec., Rth(JA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 °C, unless otherwise specified
Parameter - Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 30 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 80 pA
Zero gate voltage drain current IDSS pA
1/bs=30v,i/tss=0v,T=2r'C - 0.1 1
VDS=30V, VGS=0V, Tj=150°C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 4.5 V, ID = 8.6 A - 0.012 0.017
VGS = 10 V, ID = 9.8 A - 0.008 0.013
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
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