BSO200N03S ,Low Voltage MOSFETsapplications• N-channel• Logic levelP-DSO-8• Excellent gate charge x R product (FOM)DS(on)• Very lo ..
BSO200N03S . ,Low Voltage MOSFETscharacteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DGate threshold v ..
BSO201SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 8 mΩDS(on)• Enhancement modeI -14.9 AD• Super Logic Level (2.5 V rated ..
BSO201SP . ,Low Voltage MOSFETsCharacteristics-20 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =-250µAGS D-0.6 -0.9 -1.2Gat ..
BSO203P ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.2 AD• Super Logic Level (2.5 V rated ..
BSO203SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -9 AD• Super Logic Level (2.5 V rated)• ..
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BSO200N03S-BSO200N03S .
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
optiMosh Power-Transistor
Features
. Fast switching MOSFET for SMPS
. Optimized technology for notebook DC/DC
. Qualified according to JEDEC1 for target applications
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM)
. Very low on-resistance R DS(on)
. Avalanche rated
. dv/dt rated
BSO200N03S
Product Summary
V03 30 V
RDS(on),max 20 m9
l 8.8 A
Type Package
Ordering Code Marking
BSO200N03S P-DSO-8
Q67042-S4212 200N3S
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
10 secs steady state
Continuous drain current ID TA=25 002) 8.8 7.0 A
TA=7O oc2) 7.1 5.6
Pulsed drain current I Mum TA=25 °C3) 35
Avalanche energy, single pulse EAS ID=8.8 A, Rss=25 n 17 mJ
/D=8.8 A, VDS=20 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=150 ''C
Gate source voltage l/ss -+20 V
Power dissipation Ptot TA=25 oC2) 2.5 1.56 w
Operating and storage temperature Ti, Tstg -55 ... 150 ''C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.11 page 1 2004-02-09
CP""''"
Infineon
lechnologies
BSO200N03S
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point Rmos - - 35 KAN
Thermal resistance, R minimal footprint, - - 110
junction - ambient thJA tps10 s
minimal footprint, - - 150
steady state
6 cm2 cooling area'", - - 5O
tps10 s
6 cm2 cooling areaz), - - 80
steady state
Electrical characteristics, at Tr=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=O V, I D=1 mA 30 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=10 pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T3825 0 C GS - 0.1 1 HA
VDS=30 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Roswn, VGS=4.5 V, I D=7.3 A - 25 31 m9
Vss=10 V, lo--8.8 A - 16.6 20
Gate resistance Rs - 0.9 - 9
V >2 I R ,
Transconductance " I PSI I DI DS(on)max 9.5 19 - S
1=8.8 A
“J-STDZO and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev.1.11
page 2
