IC Phoenix
 
Home ›  BB27 > BSL211SP,Low Voltage MOSFETs
BSL211SP Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BSL211SPINFINEONN/a15230avaiLow Voltage MOSFETs


BSL211SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 67 mΩDS(on)• Enhancement modeI -4.7 AD• Super Logic Level (2.5 V rated ..
BSM100GB120DLC , IGBT-Modules
BSM100GB120DLCK , IGBT-Modules
BSM100GB120DN2 , IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
BSM100GB120DN2K , IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
BSM100GB170DLC , IGBT-Modules
BZD27-C30 ,Voltage regulator diodes
BZD27-C30 ,Voltage regulator diodes
BZD27C30P-GS08 , Zener Diodes with Surge Current Specification
BZD27C33P ,Discrete Devices -Diode-Zener Diode & ArrayFeatures • Sillicon Planar Zener Diodes  Low profile surface-mount packagee3  Zener and surge cur ..
BZD27C33P-GS08 , Zener Diodes with Surge Current Specification
BZD27C33P-GS08 , Zener Diodes with Surge Current Specification


BSL211SP
Low Voltage MOSFETs
Preliminary dataBSL211SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
P-TSOP6-6
Preliminary dataBSL211SP
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSL211SP
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSL211SP
1 Power dissipation
tot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSL211SP
tot
2 Drain current
D = f (TA)
parameter: |VGS|≥ 4.5 V
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5.5
BSL211SP
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10 -10
BSL211SP
4 Transient thermal impedance
thJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSL211SP
thJS
Preliminary dataBSL211SP
5 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
30
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: VGS
0.025
0.05
0.075
0.1
0.125
0.15
0.2
on)
7 Typ. transfer characteristics
D= f ( VGS ); |VDS|≥ 2 x|ID| x RDS(on)max
parameter: tp = 80 µs
12
16
20
24
32
8 Typ. forward transconductance
fs = f(ID); Tj=25°C
parameter: tp = 80 µs
12
15
18
24
Preliminary dataBSL211SP
9 Drain-source on-resistance
DS(on) = f(Tj)
parameter: ID = -4.7 A, VGS = -4.5 V
40
50
60
70
90
DS(on)
10 Gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS, ID = -25 µA
0.2
0.4
0.6
0.8
1.4
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz10 10
12 Forward character. of reverse diode
F = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSL211SP
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED