IC Phoenix
 
Home ›  BB27 > BSH121,N-channel TrenchMOS extremely low level FET
BSH121 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BSH121PHILIPSN/a500avaiN-channel TrenchMOS extremely low level FET
BSH121NXPN/a33000avaiN-channel TrenchMOS extremely low level FET


BSH121 ,N-channel TrenchMOS extremely low level FETApplications■ Battery management■ High speed switchcc■ Logic level translator.4. Pinning informatio ..
BSH121 ,N-channel TrenchMOS extremely low level FETApplications■ Battery management■ High speed switchcc■ Logic level translator.4. Pinning informatio ..
BSH201 ,P-channel vertical D-MOS logic level FET
BSH201 ,P-channel vertical D-MOS logic level FETELECTRICAL CHARACTERISTICST= 25˚C unless otherwise specifiedjSYMBOL PARAMETER CONDITIONS MIN. TYP. ..
BSH201 ,P-channel vertical D-MOS logic level FETLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
BSH202 ,P-channel vertical D-MOS logic level FETLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
BZD27C15P ,Discrete Devices -Diode-Zener Diode & ArrayElectrical CharacteristicsWhen used as voltage regulator diodes (T = 25 °C unless otherwise noted)J ..
BZD27C15P-GS18 , Zener Diodes with Surge Current Specification
BZD27-C160 ,Voltage regulator diodes
BZD27-C160 ,Voltage regulator diodes
BZD27-C160 ,Voltage regulator diodes
BZD27C160P ,Discrete Devices -Diode-Zener Diode & Array Document Number 858104 Rev. 1.8, 13-Apr-05C – Typ. Junction Capacitance ( pF )DP –Power Dissipa ..


BSH121
N-channel TrenchMOS extremely low level FET
BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH121 in SOT323. Features TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. Applications Battery management High speed switch Logic level translator. Pinning information TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT323, simplified outline and symbol
gate (g)
SOT323 N-channel MOSFET
source (s) drain (d)
MBC870Top view
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference data

VDS drain-source voltage (DC) Tj =25to150°C − 55 V drain current (DC) Tsp =25 °C; VGS= 4.5V − 300 mA
Ptot total power dissipation Tsp =25°C − 0.7 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 500 mA 2.3 4.0 Ω
VGS= 2.5 V; ID=75 mA 2.4 5.0 Ω
VGS= 1.8 V; ID=75 mA 3.1 8.0 Ω
Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 55 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 55 V
VGS gate-source voltage (DC) −±8V drain current (DC) Tsp =25 °C; VGS= 4.5V;
Figure2 and3 300 mA
Tsp= 100 °C; VGS= 4.5V; Figure2 − 194 mA
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs;
Figure3 1.2 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 0.7 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode
source (diode forward) current (DC) Tsp =25°C − 300 mA
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs − 1.2 A
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics

Rth(j-sp) thermal resistance from junction to solder
point
mounted on metal clad substrate;
Figure4
180 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on printed circuit board;
minimum footprint
400 K/W
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics
=25 °C unless otherwise specified
Static characteristics

V(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25 °C55 75 − V= −55 °C50 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 0.4 1.0 1.3 V= 150°C 0.3 −− V= −55°C −− 2.5 V
IDSS drain-source leakage current VDS=44 V; VGS =0V =25°C − 0.01 1.0 μA= 150°C −− 10 μA
IGSS gate-source leakage current VGS=±8 V; VDS =0V − 10 100 nA
RDSon drain-source on-state
resistance
VGS= 2.5 V; ID =75mA;
Figure7 and8 =25°C − 2.4 5 Ω= 150°C −− 7.4 Ω
VGS= 4.5 V; ID= 500 mA;
Figure7 and8 =25°C − 2.3 4 Ω
VGS= 1.8 V; ID =75mA;
Figure7 and8 =25°C − 3.1 8 Ω
Dynamic characteristics

gfs forward transconductance VDS=10 V; ID= 200 mA;
Figure11
100 380 − mS
Qg(tot) total gate charge ID= 0.5 A; VDS =44V;
VGS =8V; Figure14 1.0 − nC
Qgs gate-source charge − 0.05 − nC
Qgd gate-drain (Miller) charge − 0.5 − nC
Ciss input capacitance VGS =0V; VDS =10V;=1 MHz; Figure12 17 40 pF
Coss output capacitance − 730 pF
Crss reverse transfer capacitance − 410 pF
ton turn-on time VDD=50 V; RD= 250Ω;
VGS =10V; RG =50Ω;
RGS =50Ω 410 ns
toff turn-off time − 11 15 ns
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor
Source-drain diode

VSD source-drain (diode forward)
voltage= 300 mA; VGS =0V;
Figure13 0.95 1.5 V
trr reverse recovery time IS= 300 mA;
dIS/dt= −100 A/μs;
VGS =0V; VDS =25V 30 − ns recovered charge − 30 − nC
Table 5: Characteristics…continued
=25 °C unless otherwise specified
Philips Semiconductors BSH121
N-channel enhancement mode field-effect transistor
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED