| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BSC020N025S G |
INFINEON|Infineon |
N/a |
5000 |
 |
OptiMOS®2 Power-Transistor |
BSC020N025S G , OptiMOS®2 Power-Transistor
BSC020N025SG , OptiMOS®2 Power-Transistor
BSC020N03MS G , OptiMOS™3 M-Series Power-MOSFET
BSC020N03MSG , OptiMOS™3 M-Series Power-MOSFET
BSC022N03S ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 30 - - V(BR)DSS GS DV V =V , I =100 ..
BYW29E-150 ,Ultrafast power diodeLIMITING VALUESYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV Electrostatic discharge Human body model; ..
BYW29E-150 ,Ultrafast power diodeGENERAL DESCRIPTION PINNING SOD59 (TO220AC)Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTIONta ..
BYW29E-150 ,Ultrafast power diodeLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
