Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BS616LV4016EI-70 |
BSI |
N/a |
5530 |
|
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
BS616LV4016EIG70 BSI, Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016EIP55 BSI, Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016EIP-55 BSI, Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4017EI-70 BSI
BS616LV4016EI-70 , Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4017EIG55 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIG-55 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIG70 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIP55 , Very Low Power CMOS SRAM 256K X 16 bit
BYS459F-1500 ,High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350nsFeatures Mechanical Data• Plastic package has Underwriters Laboratories Case: JEDEC TO-220AC, ITO-2 ..
BYS459F-1500 ,High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns25-Jul-02 1BYS459-1500, BYS459F-1500, BYS459B-1500Vishay Semiconductorsformerly General Semiconduct ..
BYS459F-1500 ,High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350nsElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Value UnitMaximum ins ..