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Partno	Mfg	Dc	Qty	Available	Descript
BLL1214-250 \|BLL1214250	PHILIPS	N/a	45	avai	L-band radar LDMOS transistor

BLL1214-250 ,L-band radar LDMOS transistorapplications in the 1200 to 1400 MHzfrequency range.3DESCRIPTION 2Silicon N-channel enhancement mod ..
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BLL1214-250
L-band radar LDMOS transistor

Philips Semiconductors Product speciﬁcation
L-band radar LDMOS transistor BLL1214-250
FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS L-band radar applications in the 1200to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT502A
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Product speciﬁcation
L-band radar LDMOS transistor BLL1214-250
THERMAL CHARACTERISTICS
Notes Thermal resistance is determined under RF operating conditions; tp= 100 μs,δ= 10%. Thermal resistance is determined under RF operating conditions; tp=1 ms,δ= 10%.
CHARACTERISTICS =25 °C unless otherwise speciﬁed.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Zth mb-h= 0.25 K/W, unless otherwise speciﬁed.
Ruggedness in class-AB operation
The BLL1214-250is capableof withstandinga load mismatch correspondingto VSWR=3:1 throughall phases under
the following conditions: VDS=36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
Typical impedance
Philips Semiconductors Product speciﬁcation
L-band radar LDMOS transistor BLL1214-250
Philips Semiconductors Product speciﬁcation
L-band radar LDMOS transistor BLL1214-250
Philips Semiconductors Product speciﬁcation
L-band radar LDMOS transistor BLL1214-250

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