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BLF7G22LS-130 |BLF7G22LS130NXP Pb-freeN/a64avaiPower LDMOS transistor


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BLF7G22LS-130
Power LDMOS transistor
1. Product profile
1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22L-130;
BLF7G22LS-130
Power LDMOS transistor
Rev. 4 — 20 January 2011 Product data sheet
Table 1. Typical performance

Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110to 2170 950 28 30 18.5 32 −32[1]
1-carrier W-CDMA 2110to 2170 950 28 33 18.5 33 −39[2]
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
2. Pinning information

[1] Connected to flange.
3. Ordering information

4. Limiting values

Table 2. Pinning
BLF7G22L-130 (SOT502A)

1drain
2gate
3source [1]
BLF7G22LS-130 (SOT502B)

1drain
2gate
3source [1]
Table 3. Ordering information

BLF7G22L-130 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF7G22LS-130- earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V drain current - 28 A
Tstg storage temperature −65 +150 °C junction temperature - 225 °C
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
5. Thermal characteristics

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =950 mA; PL= 130W (CW); f= 2110 MHz.
Table 5. Thermal characteristics

Rth(j-c) thermal resistance from junction to case Tcase =80 °C; PL =30W 0.35 K/W
Table 6. Characteristics

Tj = 25 °C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID= 150 mA 1.3 1.8 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 μA
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V 29.5 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 450 nA
gfs forward transconductance VDS =10V; ID =7.5A - 10 11 S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =5.25A 0.1 0.16Ω
Table 7. Functional test information

Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f1 =2112.5MHz; f2= 2117.5 MHz; f3= 2162.5 MHz; f4= 2167.5 MHz; performance at VDS =28V; IDq= 950 mA; Tcase =25 °C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 30 - W power gain PL(AV) =30W 17 18.5- dB
RLin input return loss PL(AV) =30W - −15 −9dB drain efficiency PL(AV) =30W 29 32 - %
ACPR adjacent channel power ratio PL(AV) =30W - −31 −28 dBc
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.2 Impedance information

Table 8. Typical impedance information

IDq= 950 mA; main transistor VDS =28V.
ZS and ZL defined in Figure1.
2050 1.3 − j3.6 2.2 − j2.6
2140 1.9 − j4.2 2.0 − j2.6
2230 3.1 − j4.7 1.9 − j2.8
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.3 1 Tone CW

NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.4 1-carrier W-CDMA

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.5 2-carrier W-CDMA (5 MHz carrier spacing)

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.6 2-carrier W-CDMA (10 MHz carrier spacing)

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
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