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BLF7G22LS-200
Power LDMOS transistor
1. Product profile
1.1 General description200 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing5 MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
BLF7G22L-200;
BLF7G22LS-200
Power LDMOS transistor
Rev. 4 — 22 July 2011 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110to 2170 1620 28 55 18.5 31 31[1]
NXP Semiconductors BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF7G22L-200 (SOT502A)
BLF7G22LS-200 (SOT502B)
Table 3. Ordering informationBLF7G22L-200 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF7G22LS-200- earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C junction temperature - 200 C
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL = 80 W (CW);
VDS =28V; IDq= 1620 mA
0.26 K/W
NXP Semiconductors BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G22L-200 and BLF7G22LS-200 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =1620mA; PL= 200W (CW); f= 2110 MHz to 2170 MHz.
Table 6. CharacteristicsTj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 150 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; VDS=28V --4.2 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V 50.8 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 420 nA
gfs forward transconductance VDS =10V; ID =5.25A - 18.9 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =5.25A
-0.054-
Table 7. Functional test informationMode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f1 =2112.5MHz; f2 =2117.5 MHz; f3= 2162.5 MHz; f4= 2167.5 MHz; performance at VDS =28V; IDq= 1620 mA; Tcase =25 C; unless otherwise specified; in a
class-AB production test circuit.
PL(AV) average output power - 55 - W power gain PL(AV) =55W 16.8 18.5 - dB
RLin input return loss PL(AV) =55W - 15 6dB drain efficiency PL(AV) =55W 27 31 - %
ACPR adjacent channel power ratio PL(AV) =55W - 31 25.5 dBc
NXP Semiconductors BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
7.2 Impedance information[1] ZS and ZL defined in Figure1.
7.3 1 Tone CW
Table 8. Typical impedanceMeasured load-pull data; IDq = 1620 mA; VDS = 28 V.
2050 1.05 j4.04 2.04 j1.28
2110 1.18 j4.17 1.67 j1.52
2140 1.32 j4.68 1.67 j1.52
2170 1.58 j4.37 1.62 j1.63
2230 2.55 j5.14 1.51 j1.83
NXP Semiconductors BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
7.4 1-carrier W-CDMANXP Semiconductors BLF7G22L-200; BLF7G22LS-200
Power LDMOS transistor
7.5 2-carrier W-CDMA
