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BLF245 ,VHF power MOS transistorapplications in the VHF frequencyFig.1 Simplified outline and symbol.range.The transistor is encap ..
BLF245 ,VHF power MOS transistorPIN CONFIGURATION• High power gainlfpage• Low noise figure1 4• Easy power control• Good thermal sta ..
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BLF245
VHF power MOS transistor

Philips Semiconductors Product specification
VHF power MOS transistor BLF245
FEATURES
High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch.
DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
PINNING - SOT123
PIN CONFIGURATION
CAUTION
WARNING
QUICK REFERENCE DATA

RF performance at Th = 25 °C in a class-B test circuit.
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
CHARACTERISTICS

Tj = 25 °C unless otherwise specified.
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
Philips Semiconductors Product specification
VHF power MOS transistor BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1=1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
Note
R1 included.
Ruggedness in class-B operation

The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR=50 through all phases under
the following conditions: =25 °C; Rth mb-h= 0.3 K/W; at rated load power.
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