BGF802-20 ,CDMA800 power module
BGF944 ,GSM900 EDGE power module
BGF944 ,GSM900 EDGE power module
BGF944 ,GSM900 EDGE power module
BGM1012 ,BGM1012; MMIC wideband amplifierLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BGM1013 ,BGM1013; MMIC wideband amplifierApplications■ Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers■ Cable systems■ General p ..
BSP171 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -60 - -GS ..
BSP171P ,Low Voltage MOSFETsFeaturesV -60 VDS• P-ChannelR 0.3ΩDS(on),max• Enhancement modeI -1.9 AD• Logic level• Avalanche rat ..
BSP19 ,NPN high-voltage transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BSP19AT1 ,SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT3R , Thermal Resistance, JunctionJAto Ambient (C/W)BSP19AT1SOLDER STENCIL GUIDELINESPrior to pl ..
BSP19AT1G , NPN Silicon Expitaxial Transistor
BSP20 ,SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORapplications.handbook, halfpage 42, 4DESCRIPTION1NPN transistor in a SOT223 plastic package.PNP com ..
BGF802-20
