| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BGF200E6327 |
INFINEON|Infineon |
N/a |
420000 |
 |
|
BGF802-20 ,CDMA800 power module
BGF944 ,GSM900 EDGE power module
BGF944 ,GSM900 EDGE power module
BGF944 ,GSM900 EDGE power module
BGM1012 ,BGM1012; MMIC wideband amplifierLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSP171 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -60 - -GS ..
BSP171P ,Low Voltage MOSFETsFeaturesV -60 VDS• P-ChannelR 0.3ΩDS(on),max• Enhancement modeI -1.9 AD• Logic level• Avalanche rat ..
BSP19 ,NPN high-voltage transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
