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BGD812
860 MHz, 18.5 dB gain power doubler amplifier
Philips Semiconductors Product specification
860 MHz, 18.5 dB gain power doubler
amplifier BGD812
FEATURES Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability.
APPLICATIONS CATV systems operating in the 40to 870 MHz
frequency range.
DESCRIPTIONHybrid amplifier moduleina SOT115J package operating
with a voltage supply of 24V (DC).
PINNING - SOT115J
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Product specification
860 MHz, 18.5 dB gain power doubler
amplifier BGD812
CHARACTERISTICSBandwidth 40to 870 MHz; VB=24 V; Tmb =35 °C; ZS =ZL =75Ω
Philips Semiconductors Product specification
860 MHz, 18.5 dB gain power doubler
amplifier BGD812
Notes Slope straight line is defined as gain at 870 MHz against gain at 45 MHz. Tilt= 10.2 dB (55to 745 MHz). Tilt= 7.3 dB (55to 547 MHz). fp= 55.25 MHz; Vp=44 dBmV; fq= 805.25 MHz; Vq=44 dBmV; measured at fp +fq= 860.5 MHz. Measured according to DIN45004B: fp= 851.25 MHz; Vp =Vo; fq= 858.25 MHz; Vq =Vo−6 dB; fr= 860.25 MHz; =Vo−6 dB; measured at fp +fq−fr= 849.25 MHz. The module normally operates at VB=24 V, but is able to withstand supply transients up to 35V.
Philips Semiconductors Product specification
860 MHz, 18.5 dB gain power doubler
amplifier BGD812
Philips Semiconductors Product specification
860 MHz, 18.5 dB gain power doubler
amplifier BGD812
