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BGD714PHILIPSN/a14avai750 MHz, 20.3 dB gain power doubler amplifier


BGD714 ,750 MHz, 20.3 dB gain power doubler amplifierAPPLICATIONShandbook, halfpage• CATV systems operating in the 40 to 750 MHz2 81 35 7 9frequency ran ..
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BGD714
750 MHz, 20.3 dB gain power doubler amplifier

Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
FEATURES
Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40to 750 MHz
frequency range.
DESCRIPTION

Hybrid amplifier moduleina SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
QUICK REFERENCE DATA
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
CHARACTERISTICS

Bandwidth 40to 750 MHz; VB=24 V; Tmb =35 °C; ZS =ZL =75Ω
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
Notes
Slope straight line is defined as gainat 750 MHz− gainat45 MHz. Tilt= 7.3 dB (55to 547 MHz). fp= 55.25 MHz; Vp=44 dBmV;= 691.25 MHz; Vq=44 dBmV;
measured at fp +fq= 746.5 MHz. Measured according to DIN45004B:= 740.25 MHz; Vp =Vo;= 747.25 MHz; Vq =Vo−6 dB;= 749.25 MHz; Vr =Vo−6 dB;
measured at fp +fq−fr= 738.25 MHz. The module normally operates at VB=24 V, but is able to withstand supply transients up to 30V.
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
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