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Partno	Mfg	Dc	Qty	Available	Descript
BGA2715	NXP/PHILIPS	N/a	3000	avai	MMIC wideband amplifier
BGA2715	NXP	N/a	30000	avai	MMIC wideband amplifier

BGA2715 ,MMIC wideband amplifierLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BGA2715 ,MMIC wideband amplifierApplications LNB IF amplifiers Cable systems ISM General purpose.1.4 Quick reference data Table ..
BGA2716 ,MMIC wideband amplifierApplications LNB IF amplifiers Cable systems ISM General purpose.1.4 Quick reference data Table ..
BGA2717 ,MMIC wideband amplifierApplications■ LNB IF ampliﬁers■ Cable systems■ ISM■ General purpose.1.4 Quick reference dataTable 1 ..
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BGA2715
MMIC wideband amplifier
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features and benefits Internally matched to 50 Wide frequency range (3.3 GHz at 3 dB bandwidth) Flat 22 dB gain (1 dB upto 2.8 GHz) 8 dBm output power at 1dB compression point Good linearity for low current (IP3out = 2 dBm) Low second harmonic, 30 dBc at PD = 40 dBm Unconditionally stable (K2).
1.3 Applications LNB IF amplifiers Cable systems ISM General purpose.
1.4 Quick reference data
BGA2715
MMIC wideband amplifier
Rev. 3 — 12 September 2011 Product data sheet
Table 1. Quick reference data DC supply voltage - 5 6 V supply current - 4.3 - mA
s212 insertion power gain f=1 GHz - 22 - dB noise figure f=1 GHz - 2.6 - dB
PL(sat) saturated load power f=1 GHz - 4- dBm
NXP Semiconductors BGA2715
MMIC wideband amplifier
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Table 3. Ordering information
BGA2715 - plastic surface mounted package; 6 leads SOT363
Table 4. Marking
BGA2715 B6-
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). DC supply voltage RF input coupled V supply current - 8 mA
Ptot total power dissipation Tsp90 C- 200 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C maximum drive power - 10 dBm
NXP Semiconductors BGA2715
MMIC wideband amplifier
6. Thermal characteristics
7. Characteristics
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction
to solder point
Ptot= 200 mW;
Tsp90C
300 K/W
Table 7. Characteristics =5 V; IS =4.3 mA; Tj =25 C; measured on demo board; unless otherwise specified. supply current 3.5 4.3 5.5 mA
s212 insertion power gain f= 100 MHz 11 13.3 15 dB=1 GHz 20 21.7 23 dB= 1.8 GHz 21 23.2 25 dB= 2.2 GHz 21 23.3 25 dB= 2.6 GHz 20 22.1 24 dB=3 GHz 18 20.1 22 dB
s112 input return losses f=1 GHz 10 12 - dB= 2.2 GHz 8 10 - dB
s222 output return losses f=1 GHz 10 12 - dB
f=2.2GHz 7 8.5 - dB
s122 isolation f= 1.6 GHz 53 54 - dB= 2.2 GHz 38 39 - dB noise figure f=1 GHz - 2.6 2.8 dB
f=2.2GHz - 3.1 3.3 dB bandwidth at s2123 dB below flat gain
at 1 GHz
33.3 - GHz stability factor f=1 GHz - 18 -
f=2.2GHz - 2.3 -
PL(sat) saturated load powerf=1 GHz 5 4.0 - dBm
f=2.2GHz 6 5.0 - dBm
PL(1dB) load power at 1 dB gain compression;
f=1GHz 9 8.0 - dBm
at 1 dB gain compression;
f=2.2GHz 10 8.5 - dBm
IM2 second order
intermodulation
product
at PD= 40 dBm, f0 =1GHz 29 30 - dBc
IP3in input, third order
intercept point
f=1GHz 21 19.4 - dBm
f=2.2GHz 24 22.7 - dBm
IP3out output, third order
intercept point
f=1GHz 0 2.3 - dBm
f=2.2GHz 10.6 - dBm
NXP Semiconductors BGA2715
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2715 MMIC. The device is
internally matched to 50 , and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor, C1 should be located as close as possible to the
MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2 shows the PCB layout, used for the standard demonstration board.
NXP Semiconductors BGA2715
MMIC wideband amplifier
8.1 Grounding and output impedance
If the grounding is not optimal, the gain becomes less flat and the 50  output matching
becomes worse. To further increase output matching to 50 , a 12  resistor (R1) can be
placed in series with C3 (see Figure 3). This will significantly improve the output
impedance, at the cost of 1 dB gain and 1 dB output power.
NXP Semiconductors BGA2715
MMIC wideband amplifier
8.2 Application examples
The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifiers such as LNBs (see Figure 4).
As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution
(see Figure 5).
NXP Semiconductors BGA2715
MMIC wideband amplifier

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