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BFT92
PNP 5 GHz wideband transistor
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
DESCRIPTIONPNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
CHARACTERISTICSTj = 25°C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming S12 is zero and dim= −60 dB (DIN 45004B); IC= −14 mA; VCE= −10 V; RL =75Ω; =Vo at dim= −60 dB; fp= 495.25 MHz; =Vo −6 dB; fq= 503.25 MHz; =Vo−6 dB; fr= 505.25 MHz;
measured at f(p+q-r)= 493.25 MHz.UM 10 S2111– 1S22– -------------------------------------------------------------- dB.log=
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
Philips Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
